Chemical vapour deposition : growth processes on an atomic level / Karin Larsson.

Format:

Book

Author/Creator:

Larsson, Karin, 1955- author.

Contributor:

Institute of Physics (Great Britain), publisher.

Series:

IOP (Series). Release 22.

IOP ebooks. 2022 collection.

[IOP release $release]

IOP ebooks. [2022 collection]

Language:

English

Subjects (All):

Chemical vapor deposition.

Physical Description:

1 online resource (various pagings) : illustrations (some color).

Place of Publication:

Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2022]

System Details:

Mode of access: World Wide Web.

System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.

Biography/History:

Karin Larsson is a Professor Emerita of Inorganic Chemistry at the Department of Chemistry-Angstrom Laboratory, Uppsala University, Sweden.

Summary:

Chemical vapour deposition (CVD) is a vacuum deposition method used to produce high-quality, high-performance, solid materials. This is the first book to cover CVD growth processes at the atomic level using a combination of theoretical and experimental tools, including density functional theory (DFT) calculations.

Contents:

1. Introduction

1.1. Chemical vapour phase deposition

1.2. Overview of thin film characterization techniques

1.3. Theoretical modelling and simulations

2. Common CVD reactor setups

2.1. General

2.2. Classification of CVD reactors

3. CVD processes on an atomic level

3.1. Introduction

3.2. Chemical reactions in the substrate/thin film interface

3.3. Chemical reactions in the thin film/gas interface

4. Theoretical methods and methodologies

4.1. General

4.2. The Schrödinger equation

4.3. The density functional theory method

4.4. Geometry optimizations

4.5. Transition state search

4.6. Process energies

4.7. Property analysis methods

5. Construction of solid surface models

5.1. Surfaces within materials science of today

5.2. Surface reactivities

5.3. Surface planes

5.4. Surface morphologies

5.5. Surface relaxation

5.6. Surface reconstruction

5.7. Construction of model surfaces for CVD simulations

6. Thermodynamic modelling of CVD growth processes

6.1. General

6.2. Stability of non-terminated surfaces

6.3. Surface termination

6.4. Creation of surface reactive sites

6.5. Adsorption of growth species

6.6. Identification of the rate-limiting step in the CVD growth of diamond

6.7. Influence of dopants on the growth process

7. Identification of growth mechanisms for ALD deposition of Cu

7.1. General

7.2. Test-calculations

7.3. Adsorption of Cu-containing growth species

7.4. Disproportionation of the copper(I)chloride molecule

7.5. Removal of Cl from the CuCl adsorbate

7.6. Reaction barriers

8. Prerequisites for vapour phase growth of phase pure cubic BN

8.1. Energetical vapour phase deposition

8.2. Gentle chemical vapour phase deposition

8.3. Termination of the c-BN surface

8.4. Adsorption of growth species on the c-BN surface

8.5. Surface migration during growth of c-BN

9. Effect of substrates on the vapour phase growth of thin film materials

9.1. Substrate effect on the vapour phase growth of c-BN

9.2. Combined effect of substrate and terminating species on the vapour phase growth of c-BN

9.3. Electron bond populations

9.4. Degree of electron transfer

9.5. Conclusions

10. Construction of growth reaction pathways

10.1. Simulation of an experimentally suggested c-BN growth mechanism

11. Other types of material growth in a CVD reactor

11.1. Diamond-to-graphene transformation.

Notes:

"Version: 20221201"--Title page verso.

Includes bibliographical references.

Title from PDF title page (viewed on January 9, 2023).

Other Format:

Print version:

ISBN:

9780750331074

9780750331067

OCLC:

1358413750

Access Restriction:

Restricted for use by site license.