2022 Device Research Conference (DRC) : 26-29 June 2022 / IEEE.

Format:

Book

Author/Creator:

Institute of Electrical and Electronics Engineers, author, issuing body.

Language:

English

Subjects (All):

Integrated circuits--Congresses.

Integrated circuits.

Physical Description:

1 online resource (213 pages) : illustrations

Other Title:

2022 Device Research Conference

Place of Publication:

Piscataway, New Jersey : IEEE, 2022.

Summary:

For eight decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling Notably, many of the first public disclosures of key device technologies were made at the DRC This year marks the 80th anniversary of the DRC the longest running device research meeting in the world As we commemorate this meeting, the high caliber technical sessions will be highlighted by plenary talks and invited talks by international research pioneers and leaders behind modern electronic technology The 2022 Conference will feature 1. An informative, timely short course in a rapidly developing fields 2. Oral and poster presentations on electronic photonic device experiments and simulations 3. Plenary and invited presentations given by worldwide leaders 4. Evening rump session 5. Strong student participation and Student Paper Awards.

Contents:

Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide

The Path Towards Realistic ASIC Electronics Deployment Into Previously Impractical Extreme Application Environments

Thermal stability of ALD-grown SiO2 and Al2O3 on (010) β-Ga2O3 substrates

SiGeSn Technology for All-Group-IV Photonics

Ge-based Mid-infrared integrated photonics platform for Sensing

AIN-capped P-(AlxGal-x)203/Ga203 heterostructure field-effect transistors for near-junction thermal management of next generation power devices

Ultra-Wide Bandgap Semiconductor Transistors for mm-wave Applications

Modeling of the Charge-Voltage Characteristics of AIScN/AIN/GaN Heterostructures

First demonstration of N-polar GaN/AIGaN/AIN HEMT on Single Crystal AIN Substrates

Design Space Analysis of Superconducting Nanowire-based Cryogenic Oscillators

Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors

Polarization-Engineering of lll-N mm-Wave Transistors for High Efficiency and Linearity

D-band frequency memristor switch based on monolayer boron nitride

Free-Standing High Power GaN Multi-Fin Camel Diode Varactors

Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure

Buried-Channel Ferroelectric FETas Energy Efficient and Reliable 1T-NVM

Improved Endurance with Electron-Only Switching in Ferroelectric Devices

Statistical Analysis of 2T1R Gain-Cell RRAM Bitcell for Area Efficient, High-Performance, and Reliable Multi-level Cell Operation

Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress

A Composite TE-TFE-FE Model for Schottky Barrier Reverse Current over the Entire Electric-Field Range

Nanoscale Hf02-based memristive devices for neuromorphic computing

Ambient Effects on Reprogrammable Read-only Selector-free Memory for the Embedded NVM Applications

An Experimentally Validated, Universal Memristor Model Enabling Temporal Neuromorphic Computation

Robust Reconfigurable Field Effect Transistors Process Route Enabling Multi-VT Devices Fabrication for Hardware Security Applications

First Demonstration of Top-Gated ITO Transistors: Effect of Channel Passivation

Photonic Curing: Rapid Thermal Processing of Oxide Thin-film Transistors on Plastic

Nanoscale Devices Based on Two-dimensional and Ferroelectric Materials

Mobility Enhancement of Monolayer MoS2 Transistors using Tensile-Stressed Silicon Nitride Capping Layers

Gate-Tunable Resonant Tunneling in a Dual-Gated Twist-Controlled Double Monolayer Graphene-hBN Heterostructure

Analysis of BTI in 300 mm integrated dual-gate WS2 FETs

Superconducting Josephson Junction FET-based Cryogenic Voltage Sense Amplifier

Pulsed Current-Voltage Protocol to Reveal Polarization-Continuation in Ferroelectric Memory: Implications for Partial State Storage

Controllable Defect Engineering in 2D-MoS2 for high-performance, threshold switching memristive devices

Ultrathin Ferroelectric Nondoped Hf02 for MFSFET with High-speed and Low-voltage Operation

Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices

MFSFETwith Ferroelectric HfN for Analog Memory Application

Cryogenic Memory Array based on Ferroelectric SQUID and Heater Cryotron

Cryo-TRAM: Gated Thyristor based Capacitor-less DRAM for Cryogenic Computing

Impact of Corner Rounding on Quantum Confinement in GAA Nanosheet FETs for Advanced Technology Nodes

Self-Heating characterization and modeling of 5nm technology node FinFETs

Artificial Neural Network Surrogate Models for Efficient Design Space Exploration of 14-nm FinFETs

Compact Model for Trap Assisted Tunneling based GIDL

A width-scalable SPICE compact model for GaN HEMTs including self-heating effect

Graphene waveguide-integrated thermal infrared emitter

Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors

Tunneling transport in WSe2-MoS2 heterojunction transistor enabled by a two-dimensional device architecture

MoS2/Quantum Dot Hybrid Photodetectors on Flexible Substrates

Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states

Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties

High-performance Ti02 thin film transistors using Ti02 as both channel and dielectric

Breakdown Voltage Enhancement of GaN diodes with High-k Dielectric

Demonstration of Patterned GaN RF MIS-HEMTs Growing on Hybrid Oriented Silicon-on-lnsulator (SOI) Substrates

Trapping Phenomena in GaN HEMTs with Fe- and C-doped Buffer

Fully Epitaxial Ferroelectric Ill-Nitride Semiconductors: From Materials to Devices

Are Argon and Nitrogen Gases Really Inert to Graphene Devices?.

Notes:

Description based on publisher supplied metadata and other sources.

ISBN:

9781665498838

1665498838