The physics of solar energy conversion / Juan Bisquert.

Format:

Book

Author/Creator:

Bisquert, Juan, author.

Contributor:

John G. Hartman Memorial Library Fund.

Language:

English

Subjects (All):

Solar cells.

Physical Description:

xix, 469 pages : illustrations (some color) ; 28 cm

Place of Publication:

Boca Raton, FL : CRC Press, 2020.

Contents:

Machine generated contents note: ch. 1 Introduction to Energy Devices

References

pt. I Equilibrium Concepts and Kinetics

ch. 2 Electrostatic and Thermodynamic Potentials of Electrons in Materials

2.1. Electrostatic Potential

2.2. Energies of Free Electrons and Holes

2.3. Potential Energy of the Electrons in the Semiconductor

2.4. The Vacuum Level IV

2.5. The Fermi Level and the Work Function

2.6. The Chemical Potential of Electrons

2.7. Potential Step of a Dipole Layer or a Double Layer

2.8. Origin of Surface Dipoles

2.9. The Volta Potential

2.10. Equalization of Fermi Levels of Two Electronic Conductors in Contact

2.11. Equilibration of Metal Junctions and the Contact Potential Difference

2.12. Equilibrium across the Semiconductor Junction

General References

ch. 3 Voltage, Capacitors, and Batteries

3.1. The Voltage in the Device

3.2. Anode and Cathode

3.3. Applied Voltage and Potential Difference

3.4. The Capacitor

3.5. Measurement of the Capacitance

3.6. Energy Storage in the Capacitor

3.7. Electrochemical Systems: Structure of the Metal/Solution Interface

3.8. Electrode Potential and Reference Electrodes

3.9. Redox Potential in Electrochemical Cells

3.10. Electrochemical and Physical Scales of Electron Energy in Material Systems

3.11. Changes of Electrolyte Levels with pH

3.12. Principles of Electrochemical Batteries

3.13. Capacity and Energy Content

3.14. Practical Electrochemical Batteries

3.14.1. Zinc-Silver Battery

3.14.2. Sodium-Sulfur Battery

3.15. Li-Ion Battery

ch. 4 Work Functions and Injection Barriers

4.1. Injection to Vacuum in Thermionic Emission

4.2. Richardson-Dushman Equation

4.3. Kelvin Probe Method

4.4. Photoelectron Emission Spectroscopy

4.5. Injection Barriers

4.6. Pinning of the Fermi Level and Charge-Neutrality Level

ch. 5 Thermal Distribution of Electrons, Holes, and Ions in Solids

5.1. Equilibration of the Electrochemical Potential of Electrons

5.2. Configurational Entropy of Weakly Interacting Particles

5.3. Equilibrium Occupancy of Conduction Band and Valence Band States

5.4. Equilibrium Fermi Level and the Carrier Number in Semiconductors

5.5. Transparent Conducting Oxides

5.6. Hot Electrons

5.7. Screening

5.8. The Rectifier at Forward and Reverse Voltage

5.9. Semiconductor Devices as Thermal Machines that Realize Useful Work

5.10. Cell Potential in the Lithium Ion Battery

5.11. Insertion of Ions: The Lattice Gas Model

ch. 6 Interfacial Kinetics and Hopping Transitions

6.1. Principle of Detailed Balance

6.2. Form of the Transition Rates

6.3. Kinetics of Localized States: Shockley-Read-Hall Recombination Model

6.4. Reorganization Effects in Charge Transfer: The Marcus Model

6.5. Polaron Hopping

6.6. Rate of Electrode Reaction: Butler-Volmer Equation

6.6.1. Availability of Electronic Species

6.6.2. Availability of Redox Species

6.6.3. The Kinetic Constant for Charge Transfer

6.7. Electron Transfer at Metal-Semiconductor Contact

6.8. Electron Transfer at the Semiconductor/Electrolyte Interface

ch. 7 The Chemical Capacitance

7.1. Carrier Accumulation and Energy Storage in the Chemical Capacitance

7.2. Localized Electronic States in Disordered Materials and Surface States

7.3. Chemical Capacitance of a Single State

7.4. Chemical Capacitance of a Broad DOS

7.5. Filling a DOS with Carriers: The Voltage and the Conductivity

7.6. Chemical Capacitance of Li Intercalation Materials

7.7. Chemical Capacitance of Graphene

ch. 8 The Density of States in Disordered Inorganic and Organic Conductors

8.1. Capacitive and Reactive Current in Cyclic Voltammetry

8.2. Kinetic Effects in CV Response

8.3. The Exponential DOS in Amorphous Semiconductors

8.4. The Exponential DOS in Nanocrystalline Metal Oxides

8.5. Basic Properties of Organic Layers

8.6. The Gaussian DOS

ch. 9 Planar and Nanostructured Semiconductor Junctions

9.1. Structure of the Schottky Barrier at a Metal/Semiconductor Contacts

9.2. Changes of the Schottky Barrier by the Applied Voltage

9.3. Properties of the Planar Depletion Layer

9.4. Mott-Schottky Plots

9.5. Capacitance Response of Defect Levels and Surface States

9.6. Semiconductor Electrodes and the Flatband Potential

9.7. Changes of Redox Level and Band Unpinning

9.8. Inversion and Accumulation Layer

9.9. Heterojunctions

9.10. Effect of Voltage on Highly Doped Nanocrystalline Semiconductors

9.11. Homogeneous Carrier Accumulation in Low-Doped Nanocrystalline Semiconductors

pt. II Foundations of Carrier Transport

ch. 10 Carrier Injection and Drift Transport

10.1. Transport by Drift in the Electrical Field

10.2. Injection at Contacts

10.3. The Metal-Insulator-Metal Model

10.4. The Time-of-Flight Method

ch. 11 Diffusion Transport

11.1. Diffusion in the Random Walk Model

11.2. Macroscopic Diffusion Equation

11.3. The Diffusion Length

11.4. Chemical Diffusion Coefficient and the Thermodynamic Factor

ch. 12 Drift-Diffusion Transport

12.1. General Transport Equation in Terms of Electrochemical Potential

12.2. The Transport Resistance

12.3. The Einstein Relation

12.4. Drift-Diffusion Equations

12.5. Ambipolar Diffusion Transport

12.6. Relaxation of Injected Charge

12.7. Transient Current in Insulator Layers

12.8. Modeling Transport Problems

ch. 13 Transport in Disordered Media

13.1. Multiple Trapping and Hopping Transport

13.2. Transport by Hopping in a Single Level

13.3. Trapping Factors in the Kinetic Constants

13.4. Two-Level (Single-Trap) Model

13.5. Multiple Trapping in Exponential DOS

13.6. Activated Transport in a Gaussian DOS

13.7. Multiple Trapping in the Time Domain

13.8. Hopping Conductivity

13.9. The Transport Energy

13.10. Variable Range Hopping

ch. 14 Thin Film Transistors

14.1. Organic Thin Film Transistors

14.2. Carrier Density in the Channel

14.3. Determination of the DOS in Thin Film Transistor Configuration

14.4. Current-Voltage Characteristics

14.5. The Mobility in Disordered Semiconductors

14.6. Electrochemical Transistor

ch. 15 Space-Charge-Limited Transport

15.1. Space-Charge-Limited Current

15.2. Injected Carrier Capacitance in SCLC

15.3. Space Charge in Double Injection

ch. 16 Impedance and Capacitance Spectroscopies

16.1. Frequency Domain Measurements

16.2. Dielectric Relaxation Functions

16.3. Resistance and Capacitance in Equivalent Circuit Models

16.4. Relaxation in Time Domain

16.5. Universal Properties of the Frequency-Dependent Conductivity

16.6. Electrode Polarization

pt. III Radiation, Light, and Semiconductors

ch. 17 Blackbody Radiation and Light

17.1. Photons and Light

17.2. Spread and Direction of Radiation

17.3. Color and Photometry

17.4. Blackbody Radiation

17.5. The Planck Spectrum

17.6. The Energy Density of The Distribution of Photons in Blackbody Radiation

17.7. The Photon and Energy Fluxes in Blackbody Radiation

17.8. The Solar Spectrum

ch.

18 Light Absorption, Carrier Recombination, and Luminescence

18.1. Absorption of Incident Radiation

18.2. Luminescence and Energy Transfer

18.3. The Quantum Efficiency

18.4. The Recombination of Carriers in Semiconductors

18.5. Recombination Lifetime

ch. 19 Optical Transitions in Organic and Inorganic Semiconductors

19.1. Light Absorption in Inorganic Solids

19.2. Free Carrier Phenomena

19.3. Excitons

19.4. Quantum Dots

19.5. Organic Molecules and Materials

19.6. The CT Band in Organic Blends and Heterojunctions

pt. IV Photovoltaic Principles and Solar Energy Conversion

ch. 20 Fundamental Model of a Solar Cell

20.1. Majority Carrier Injection Mechanisms

20.2. Majority Carrier Devices

20.3. Minority Carrier Devices

20.4. Fundamental Properties of a Solar Cell

20.5. Physical Properties of Selective Contacts in Solar Cells

ch. 21 Recombination Current in the Semiconductor Diode

21.1. Dark Equilibrium of Absorption and Emission of Radiation

21.2. Recombination Current

21.3. Dark Characteristics of Diode Equation

21.4. Light-Emitting Diodes

21.5. Dye Sensitization and Molecular Diodes

ch. 22 Radiative Equilibrium in a Semiconductor

22.1. Utilization of Solar Photons

22.2. Fundamental Radiative Carrier Lifetime

22.3. Radiative Emission of a Semiconductor Layer

22.4. Photons at Nonzero Chemical Potential

Contents note continued: ch. 23 Reciprocity Relations in Solar Cells and Fundamental Limits to the Photovoltage

23.1. The Reciprocity between LED and Photovoltaic Performance Parameters

23.2. Factors Determining the Photovoltage

23.3. External Radiative Efficiency

23.4. Photon Recycling

23.5. Radiative Cooling in EL and Photoluminescence

23.6. Reciprocity of Absorption and Emission in a CT Band

ch. 24 Charge Separation and Material Limits to the Photovoltage

24.1. Light Absorption

24.2. Charge Separation

24.3. Materials Limits to the Photovoltage

ch. 25 Operation of Solar Cells and Fundamental Limits to Their Performance

25.1. Current-Voltage Characteristics

25.2. Power Conversion Efficiency

25.3. Analysis of FF

25.4. Shockley-Queisser Efficiency Limits

25.5. Practical Solar Cells Efficiency Limits

ch. 26 Charge Collection in Solar Cells

26.1. Introduction to Charge Collection Properties

26.2. Charge Collection Distance

26.3. General Modeling Equations

26.4. The Boundary Conditions

26.4.1. Charge Extraction Boundary Condition

26.4.2. Blocking Boundary Condition

26.4.3. Generalized Boundary Conditions

26.5. A Photovoltaic Model with Diffusion and Recombination

26.6. The Gartner Model

26.7. Diffusion-Recombination and Collection in the Space-Charge Region

26.8. Solar Cell Simulation

26.9. Classification of Solar Cells

26.10. Measuring and Reporting Solar Cell Efficiencies

ch. 27 Spectral Harvesting and Photoelectrochemical Conversion

27.1. Conversion of Photon Frequencies for Solar Energy Harvesting

27.2. Tandem Solar Cells

27.3. Solar Fuel Generation

References.

Notes:

Includes bibliographical references and index.

Local Notes:

Acquired for the Penn Libraries with assistance from the John G. Hartman Memorial Library Fund.

ISBN:

9780367496029

036749602X

9781138584648

1138584649

OCLC:

1158584081

Publisher Number:

99991363421