Basic principles of electronics. Volume 2, Semiconductors / J. Jenkins, W. H. Jarvis.

Format:

Book

Author/Creator:

Jenkins, J., author.

Jarvis, W. H., author.

Series:

Commonwealth and international library. Physics division.

Commonwealth and International Library : Physics Division

Language:

English

Subjects (All):

Semiconductors.

Electronics.

Physical Description:

1 online resource (267 p.)

Place of Publication:

Oxford, England : Pergamon Press, 1971.

Language Note:

English

Summary:

Basic Principles of Electronics

Contents:

Front Cover; Semiconductors; Copyright Page; Dedication; Table of Contents; PREFACE; CHAPTER 1. CONDUCTION IN THE SOLID STATE; 1.1. HISTORICAL; 1.2. ""VACANCIES"" IN CRYSTALS; 1.3. DRUDE'S THEORY OF METALLIC CONDUCTION; 1.4. THE PARADOX; 1.5. MEAN FREE TIME; QUESTIONS; CHAPTER 2. CONDUCTION AND HEAT; 2.1. SOME KINETIC THEORY; 2.2. THE MEAN FREE PATH; 2.3. THE JOULE HEATING EFFECT; 2.4. THE FAILURE OF DRUDE'S THEORY; 2.5. THE WORK OF WIEN; 2.6. THE MODERN PICTURE OF RESISTIVITY; 2.7. THE EFFECT OF TEMPERATURE ON THE CONDUCTIVITY; QUESTIONS; CHAPTER 3. SEMICONDUCTORS; 3.1. HISTORICAL

3.2. CLASSIFICATION OF MATERIALS3.3. ELECTRONS AND HOLES; 3.4. EXTRINSIC OR IMPURITY SEMICONDUCTORS; QUESTIONS; CHAPTER 4. SEMICONDUCTOR TECHNOLOGY AND SIMPLE DEVICES; 4.1. TERMINOLOGY; 4.2. CRYSTAL PREPARATION; 4.3. THE MATERIALS IN USE; 4.4. PHOTOCONDUCTORS; 4.5. THE HALL EFFECT: MAGNETOMETERS; 4.6. THERMOELECTRIC SEMICONDUCTORS; 4.7. THERMISTORS; 4.8. STRAIN GAUGES; QUESTIONS; CHAPTER 5. THE p-n JUNCTION; 5.1. SEMICONDUCTOR JUNCTIONS; 5.2. DIFFUSION IN A SEMICONDUCTOR; 5.3. THE POTENTIAL BARRIER; 5.4. THE p-n JUNCTION WITH FORWARD AND REVERSE BIAS; 5.5. THE RESISTANCE OF A p-n JUNCTION

QUESTIONSCHAPTER 6. p-n JUNCTION DEVICES; 6.1. PRACTICAL JUNCTIONS; 6.2. RECTIFIERS; 6.3. DIODES; 6.4. COMPARISON OF p-n JUNCTION DIODES WITH THERMIONIC VALVE DIODES; 6.5. THE VARACTOR DIODE; 6.6. THE ZENER DIODE; 6.7. PHOTOCELLS; QUESTIONS; CHAPTER 7. THE TRANSISTOR; 7 1. THE PRINCIPLE OF THE JUNCTION TRANSISTOR; 7.2. THE CURRENT GAIN, α; QUESTIONS; CHAPTER 8. TRANSISTOR PRODUCTION AND CHARACTERISTICS; 8.1. TRANSISTOR PRODUCTION; 8.2. TRANSISTOR CHARACTERISTICS; QUESTIONS; CHAPTER 9. THE TRANSISTOR AS A CIRCUIT ELEMENT; 9.1. A LOW-FREQUENCY EQUIVALENT CIRCUIT FOR COMMON BASE

9.2. AMPLIFICATION IN COMMON BASE CONNECTION9.3. A LOW-FREQUENCY EQUIVALENT CIRCUIT FOR COMMON EMITTER; 9.4. THE COMMON EMITTER AMPLIFIER; 9.5. DETERMINATION OF PARAMETERS FROM TRANSISTOR CHARACTERISTICS; 9.6. THE LOAD LINE; 9.7. BIAS CIRCUITS; 9.8. DESIGN OF A BIAS CIRCUIT; 9.9. ALTERNATIVE TRANSISTOR CONFIGURATIONS; QUESTIONS; CHAPTER 10. COMMON TRANSISTOR CIRCUITRY; 10.1. MULTI-STAGE AMPLIFIERS; 10.2. POWER OUTPUT STAGES; 10.3. TUNED AMPLIFIERS; 10.4. OSCILLATORS; 10.5. THE TRANSISTOR SWITCH; 10.6. D.C. AMPLIFIERS; 10.7. INVERTERS; QUESTIONS; CHAPTER 11. SPECIAL DEVICES, PROCESSES AND USES

11.1. HETEROJUNCTIONS11.2. SONAR AMPLIFIER; 11.3. RADIATION DETECTION; 11.4. POWER CONTROL; 11.5. MICROWAVE DEVICES; 11.6. OPTO-ELECTRONICS; 11.7. THE UNIJUNCTION; 11.8. FIELD EFFECT TRANSISTORS; 11.9. MICROELECTRONICS; QUESTIONS; APPENDIX I: THE h-PARAMETERS; APPENDIX II: RELATIONSHIP BETWEEN h AND T PARAMETERS FOR COMMON EMITTER CONFIGURATION; APPENDIX III: INPUT AND OUTPUT RESISTANCES AND GAINS FOR GROUNDED EMITTER TRANSISTOR, IN TERMS OF h-PARAMETERS; APPENDIX IV: CLASSIFICATION OF SEMICONDUCTOR TYPES; APPENDIX V: PRACTICAL PRECAUTIONS WITH TRANSISTORS

APPENDIX VI: SYMBOLS USED IN THE TEXT

Notes:

Description based upon print version of record.

Includes bibliographical references and index.

Description based on online resource; title from PDF title page (ebrary, viewed January 9, 2015).

ISBN:

1-4831-8667-9