Technology computer aided design : simulation for VLSI MOSFET / edited by Chandan Kumar Sarkar.

Format:

Book

Contributor:

Sarkar, Chandan Kumar.

Language:

English

Subjects (All):

Integrated circuits--Very large scale integration--Computer-aided design.

Integrated circuits.

Metal oxide semiconductor field-effect transistors--Computer-aided design.

Metal oxide semiconductor field-effect transistors.

Physical Description:

1 online resource (445 p.)

Edition:

1st ed.

Place of Publication:

Boca Raton : CRC Press, 2013.

Language Note:

English

Summary:

"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"-- Provided by publisher.

Contents:

Front Cover; Contents; Preface; The Editor; Contributors; Chapter 1 - Introduction to Technology Computer Aided Design; Chapter 2 - Basic Semiconductor and Metal-Oxide-Semiconductor (MOS) Physics; Chapter 3 - Review of Numerical Methods for Technology Computer Aided Design (TCAD); Chapter 4 - Device Simulation Using ISE-TCAD; Chapter 5 - Device Simulation Using Silvaco ATLAS Tool; Chapter 6 - Study of Deep Sub-Micron VLSI MOSFETs through TCAD; Chapter 7 - MOSFET Characterization for VLSI Circuit Simulation; Chapter 8 - Process Simulation of a MOSFET Using TSUPREM-4 and Medici; Back Cover

Notes:

Description based upon print version of record.

Includes bibliographical references and index.

ISBN:

1-351-83234-4

1-315-21645-0

1-4665-1266-0

9781315216454

OCLC:

841809949