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Modern Power Electronic Devices : Physics, applications, and reliability / Francesco Iannuzzo [Ed].
- Format:
- Book
- Series:
- Energy Engineering.
- Energy Engineering
- Language:
- English
- Subjects (All):
- Electric resistance.
- Gallium compounds.
- Insulated gate bipolar transistors.
- Logic design.
- Semiconductors.
- Silicon.
- Silicon compounds.
- Thyristors.
- Wide gap semiconductors.
- Physical Description:
- 1 online resource (504 pages).
- Place of Publication:
- Stevenage : IET, 2020.
- System Details:
- text file
- Summary:
- The book contains 14 chapters. The following topics are dealt with: Power Electronics challenges; Junction diodes; Thyristors; Silicon MOSFETs; Silicon IGBTs; IGCTs; Silicon carbide diodes; SiC MOSFETs; GaN metal-insulator-semiconductor field-effect transistors; Gallium nitride transistors: applications and vertical solutions; Module design and reliability; Switching cell design; Modern insulated gate bipolar transistor (IGBT) gate driving methods for robustness and reliability; and Prospects and outlooks in power electronics technology and market.
- ISBN:
- 9781785619182
- Access Restriction:
- Restricted for use by site license.
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