EUV lithography / Vivek Bakshi, editor.

Format:

Book

Contributor:

Bakshi, Vivek, editor.

Society of Photo-Optical Instrumentation Engineers, publisher.

Series:

SPIE Press monograph ; PM283.

SPIE Press monograph ; PM283

Language:

English

Subjects (All):

Ultraviolet radiation--Industrial applications.

Ultraviolet radiation.

Photolithography.

Optical coatings.

Physical Description:

1 online resource (727 pages) : illustrations

Edition:

Second edition.

Other Title:

Extreme ultraviolet lithography.

Place of Publication:

Bellingham, Washington : SPIE Press, 2018.

Summary:

Extreme ultraviolet lithography (EUVL) is the principal lithography technology aiming to manufacture computer chips beyond the current 193-nm-based optical lithography, and recent progress has been made on several fronts: EUV light sources, optics, optics metrology, contamination control, masks and mask handling, and resists. This book covers the fundamental and latest status of all aspects of EUVL in field. It thoroughly covers the current in-field version of EUVL plus related topics, including light sources, optics, mask, photoresists, contamination, imaging and scanners. In the nine years since SPIE Press published the first edition of EUVL Lithography, much progress has taken place in the development of EUVL as the choice technology for NGL. In 2008, EUVL was a prime contender to replace 193 nm based optical lithography in leading edge computer chipmaking, but not everyone was convinced at that point. Switching from 193 nm to 13.5 nm wavelengths was a much bigger jump than the industry had attempted before. It brought several difficult challenges in all areas of lithography - light source, scanner, mask, mask handling, optics, optics metrology, resist, computation, materials and optics contamination. These challenges have been effectively resolved, and several leading-edge chipmakers have announced dates, starting in 2018, for inserting EUVL into high-volume manufacturing.

Contents:

Foreword to the second edition

Preface to the second edition

List of contributors

List of acronyms and abbreviations

1. EUV lithography: a historical perspective / Hiroo Kinoshita and Obert Wood

2. The EUV LLC: an historical perspective / Stefan Wurm

3A. EUV sources for high-volume manufacturing / Igor V. Fomenkov, Bruno La Fontaine, David C. Brandt, David W. Myers, Alexander I. Ershov, Alexander A. Schafgans, Yezheng Tao, and Georgiy O. Vaschenko

3B. High-power EUV source by gigaphoton for high-volume manufacturing / Hakaru Mizoguchi, Taku Yamazaki, Tatsuya Yanagida, Krzysztof M. Nowak, and Takashi Saitou

4A. The EQ-10 electrodeless Z-pinch metrology source / Stephen Horne, Matthew M. Besen, Paul A. Blackborow, Ron Collins, Deborah Gustafson, Matthew J. Partlow, and Donald K. Smith

4B. High-radiance LDP source for mask inspection / Yusuke Teramoto

5. Optical systems for EUVl / Sascha Migura, Winfried Kaiser, Jens Timo Neumann, and Hartmut Enkisch

6A. Optics contamination / Charles S. Tarrio, Robert F. Berg, Shannon Hill, and Saša Bajt

6B. Collector contamination: normal-incidence (multilayer) collectors / Daniel T. Elg, Shailendra N. Srivastava, and David N. Ruzic

7. EUV mask and mask metrology / Jinho Ahn and Chan-Uk Jeon

8. Photoresists for EUV lithography / Robert L. Brainard, Gregg Gallatin, Mark Neisser, and Amrit Narasimhan

9. Fundamentals of EUVL scanners / Jan B.P. van Schoot and Hans Jasper

10. EUVL system patterning performance / Patrick Naulleau and Gregg Gallatin

Appendix: Reference Data for the EUV Spectral Region / Eric M. Gullikson and David Attwood

Index.

Notes:

Includes bibliographical references and index.

Title from PDF title page (SPIE eBooks Website, viewed 2017-12-20).

ISBN:

1-5231-3400-3

1-5106-1679-9

OCLC:

1016957955