Narrow-gap semiconductor photodiodes / Antoni Rogalski, Krzysztof Adamiec, Jaroslaw Rutkowski.

Format:

Book

Author/Creator:

Rogalski, Antoni, author.

Adamiec, Krzysztof, author.

Rutkowski, Jaroslaw, author.

Contributor:

Society of Photo-Optical Instrumentation Engineers, publisher.

Series:

SPIE monograph ; PM77.

SPIE digital library

SPIE Press monograph ; PM77

Language:

English

Subjects (All):

Photodiodes.

Narrow gap semiconductors.

Mercury cadmium tellurides.

Genre:

Electronic books.

Physical Description:

1 online resource (xi, 437 pages) : illustrations.

Place of Publication:

Bellingham, Wash. : SPIE Press, 2000.

Bellingham, Wash., USA : SPIE Press, 2019.

System Details:

Mode of access: World Wide Web.

text file

Summary:

In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.

Contents:

Preface

1. Introduction: 1.1. Historical background; 1.2. General classification of IR detectors; 1.3. General theory of photon detectors; References

2. Narrow-gap semiconductor materials: 2.1. III-V materials; 2.2. HgCdTe ternary alloy; 2.3. Lead salts; 2.4. Hg-based alternatives to HgCdTe; References

3. Generation-recombination processes: carrier lifetime: 3.1. Shockley-Read mechanism; 3.2. Radiative mechanism; 3.3. Auger mechanism; 3.4. Carrier lifetime in InSb and InAs; 3.5. Carrier lifetime in InxGa1-xAs; 3.6. Carrier lifetime in Hg1-xCdxTe; 3.7. Carrier lifetime in lead salts; 3.8. Carrier lifetimes in superlattices; References

4. Operating principles of photodiodes: 4.1. p-n junction photodiodes; 4.2. Schottky barrier photodiodes; 4.3. MIS photodiodes; 4.4. Non-equilibrium photodiodes; References

5. Focal plane arrays: 5.1. Overview of focal plane array architectures; 5.2. Monolithic focal plane arrays; 5.3. Hybrid focal plane arrays; 5.4. Maturity, cost, applications and technology directions; References

6. III-V photodiodes: 6.1. InSb photodiodes; 6.2. InSb nonequilibrium photodiodes; 6.3. InAs photodiodes; 6.4. InAsSb photodiodes; 6.5. InGaAs photodiodes; 6.6. Focal plane arrays; References

7. HgCdTe photodiodes: 7.1. Fundamental limitation to HgCdTe photodiode performance; 7.2. Nonfundamental sources of dark current and noise; 7.3. Technology; 7.4. Properties of HgCdTe photodiodes; 7.5. Dual-band detectors; 7.6. Non-equilibrium HgCdTe photodiodes; 7.7. MIS photodiodes; 7.8. Schottky barrier photodiodes; 7.9. Focal plane arrays; References

8. HgZnTe and HgMnTe photodiodes: 8.1. HgZnTe photodiodes; 8.2. HgMnTe photodiodes; References

9. Lead salt photodiodes: 9.1. Photodiode performance; 9.2. Technology and properties of p / n junction photodiodes; 9.3. Schottky-barrier photodiodes; 9.4. Unconventional thin film photodiodes; 9.5. Lead salts FPAs; References

10. Superlattice photodiodes: 10.1. Superlattices - background; 10.2. HgTe/CdTe superlattice photodiodes; 10.3. Strained layer superlattice photodiodes; References

Final remarks

Index.

Notes:

"SPIE Digital Library."--Website.

Includes bibliographical references and index.

Title from PDF title page (SPIE eBooks Website, viewed 2019-06-11).

Other Format:

Print version

ISBN:

9781510629943

OCLC:

1104962671

Access Restriction:

Restricted for use by site license.