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Optical Sensors 2011; and Photonic Crystal Fibers V
- Format:
- Book
- Author/Creator:
- Baldini, Francesco, author.
- Series:
- Proceedings of SPIE--the International Society for Optical Engineering ; v. 8073.
- Proceedings of SPIE--the International Society for Optical Engineering ; v. 8073
- Language:
- English
- Subjects (All):
- Crystal optics--Congresses.
- Crystal optics.
- Physical Description:
- 1 online resource.
- Place of Publication:
- [Place of publication not identified] SPIE 2011
- Language Note:
- English
- Summary:
- Photodetectors designed for the Extreme Ultraviolet (EUV) range with the Aluminum Gallium Nitride (AlGaN) active layer are reported. AlGaN layers were grown by Molecular Beam Epitaxy (MBE) on Si(111) wafers. Different device structures were designed and fabricated, including single pixel detectors and 2D detector arrays. Sensitivity in different configurations was demonstrated, including front- and backside illumination. The latter was possible after integration of the detector chips with dedicated Si-based readouts using high-density In bump arrays and flip-chip bonding. In order to avoid radiation absorption in silicon, the substrate was removed, leaving a submicron-thin membrane of AlGaN active layer suspended on top of an array of In bumps. Optoelectrical characterization was performed using different UV light sources, also in the synchrotron beamlines providing radiation down to the EUV range. The measured cut-off wavelength of the active layer used was 280 nm, with a rejection ratio of the visible radiation above 3 orders of magnitude. Spectral responsivity and quantum efficiency values.
- Notes:
- Bibliographic Level Mode of Issuance: Monograph
- Includes bibliographical references and index.
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