Antimonide-based infrared detectors : a new perspective / Antoni Rogalski, Małgorzata Kopytko, and Piotr Martyniuk.

Format:

Book

Author/Creator:

Rogalski, Antoni, author.

Kopytko, Małgorzata, author.

Martyniuk, Piotr, author.

Contributor:

Society of Photo-Optical Instrumentation Engineers, publisher.

Series:

SPIE monograph ; PM280.

SPIE digital library

SPIE Press monograph ; PM280

Language:

English

Subjects (All):

Infrared detectors.

Infrared technology--Materials.

Infrared technology.

Semiconductors.

Antimonides.

Superlattices as materials.

Genre:

Electronic books.

Physical Description:

1 online resource (282 pages).

Place of Publication:

Bellingham, Washington, USA : SPIE Press, [2018]

System Details:

Mode of access: World Wide Web.

text file

Summary:

"Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"-- Provided by publisher.

Contents:

Preface

Acknowledgments

Chapter 1. Infrared detector characterization: 1.1. Introduction; 1.2. Classification of infrared detectors; 1.3. Detector figures of merit; 1.4. Fundamental detector's performance limits; 1.5. Performance of focal plane arrays; References

Chapter 2. Antimonide-based materials: 2.1 Bulk materials; 2.2 Epitaxial layers; 2.3 Physical properties; 2.4 Thermal generation-recombination processes; References

Chapter 3. Type-II superlattices: 3.1. Bandgap-engineered infrared detectors; 3.2. Growth of Type-II superlattices; 3.3. Physical properties; 3.4. Carrier lifetimes; 3.5. InAs/GaSb versus InAs/InAsSb superlattice systems; References

Chapter 4. Antimonide-based infrared photodiodes: 4.1. Recent progress in binary III-V photodiodes; 4.2. InAsSb bulk photodiodes; References

Chapter 5. Type-II superlattice infrared photodiodes: 5.1. InAs/GaSb superlattice photodiodes; 5.2. InAs/InAsSb superlattice photodiodes; 5.3. Device passivation; 5.4. Noise mechanisms in Type-II superlattice photodetectors; References

Chapter 6. Infrared barrier photodetectors: 6.1. Principle of operation; 6.2. SWIR barrier detectors; 6.3. MWIR InAsSb barrier detectors; 6.4. LWIR InAsSb barrier detectors; 6.5. T2SL barrier detectors; 6.6. Barrier detectors versus HgCdTe photodiodes; 6.7. Multicolor barrier detectors; References

Chapter 7. Cascade infrared photodetectors: 7.1. Multistage infrared detectors; 7.2. Type-II superlattice interband cascade infrared detectors; 7.3. Performance comparison with HgCdTe HOT photodetectors; References

Chapter 8. Coupling of infrared radiation with detector: 8.1 Standard coupling; 8.2 Plasmonic coupling; 8.3 Photon trapping detectors; References

Chapter 9. Focal plane arrays: 9.1. Trends in infrared focal plane arrays; 9.2. Infrared FPA considerations; 9.3. InSb arrays; 9.4. InAsSb nBn detector FPAs; 9.5. Type-II superlattice FPAs; References

Chapter 10. Final remarks: 10.1. P-on-n HgCdTe photodiodes; 10.2. Manufacturability of focal plane arrays; 10.3. Conclusions; References

Index.

Notes:

"SPIE Digital Library."--Website.

Includes bibliographical references and index.

Title from PDF title page (SPIE eBooks Website, viewed 2018-04-04).

Other Format:

Print version

ISBN:

9781510611405

1510611401

OCLC:

1030955733

Access Restriction:

Restricted for use by site license.