High-operating-temperature infrared photodetectors / Jozef Piotrowski, Antoni Rogalski.

Format:

Book

Author/Creator:

Piotrowski, Jozef, 1943- author.

Contributor:

Rogalski, Antoni.

Society of Photo-Optical Instrumentation Engineers.

Series:

SPIE monograph ; PM169.

SPIE Press monograph ; PM169

Language:

English

Subjects (All):

Infrared detectors.

Optical detectors.

Physical Description:

1 online resource (xiv, 240 pages) : illustrations, digital file.

Place of Publication:

Bellingham, Wash. : SPIE, 2007.

System Details:

Mode of access: World Wide Web.

text file

Summary:

This book presents approaches, materials, and devices that eliminate the cooling requirements of IR photodetectors operating in the middle- and long-wavelength ranges of the IR spectrum. It is based mainly on the authors' experiences in developing and fabricating near room temperature HgCdTe detectors at Vigo Systems Limited and at the Institute of Applied Physics Military University of Technology (both in Warsaw, Poland). The text also discusses solutions to other specific problems of high-temperature detection, such as poor collection efficiency due to a short diffusion length, the Johnson-Nyquist noise of parasitic impedances, and interfacing of very low resistance devices to electronics. Suitable for graduate students in physics and engineering who have received a basic preparation in modern solid state physics and electronic circuits, this book will also be of interest to individuals who work with aerospace sensors and systems, remote sensing, thermal imaging, military imaging, optical telecommunications, IR spectroscopy, and lidar.

Contents:

Chap. 1. Introduction. 1.1. General remarks

1.2. Detector figures of merit

1.3. Detectivity requirements for thermal imagers

1.4. Cooling of ir detectors

References.

Chap. 2. Fundamental performance limitations of infrared photodetectors. 2.1. Infrared photon detector classifications

2.2. Theoretical model

2.3. Optimum thickness of a detector

2.4. Detector material figure of merit

2.5. Reducing device volume to enhance performance

Chap. 3. Materials used for intrinsic photodetectors. 3.1. Semiconductors for intrinsic photodetectors

3.2. Hg1-xCdxTe ternary alloys

3.3. Hg-based alternatives to HgCdTe

3.4 InAs/Ga1-xInxSb Type II superlattices

3.5 Novel Sb-based materials

3.6 Lead salts

Chap. 4. Intrinsic photodetectors

4.1. Optical absorption

4.2. Thermal generation-recombination processes

4.4. Modeling of high-temperature photodetectors

Chap. 5. Hg1xCdxTe photoconductors

5.1. Simplified model of equilibrium mode photoconductors

5.2. Excluded photoconductors

5.3. Practical photoconductors

5.4. SPRITE detectors

Chap. 6. Hg1-xCdxTe photodiodes

6.1. Theoretical design of Hg-1xCdxTe photodiodes

6.2. Technology of Hg1-xCdxTe photodiodes

6.3. Practical photodiodes

Chap. 7. Photoelectromagnetic, magnetoconcentration, and Dember IR detectors

7.1. PEM detectors

7.2. Magnetoconcentration detectors

7.3. Dember detectors

Chap. 8. Lead salt photodetectors

8.1. PbS and PbSe photoconductors

8.2. Lead salt photovoltaic detectors

Chap. 9. Alternative uncooled long-wavelength IR photodetectors

9.1. HgZnTe and HgMnTe detectors

9.2. III-V detectors

9.3. InAs/Ga1-xInxSb type-II superlattice detectors

9.4. Thermal detectors

Chap. 10. Final remarks

10.1. Summary of progress to date

10.2. Directions for future development

References

Index.

Notes:

"SPIE digital library."

Includes bibliographical references and index.

ISBN:

9780819478375

OCLC:

435912147

Access Restriction:

Restricted for use by site license.