2 options
Si Detectors and Characterization for HEP and Photon Science Experiment : How to Design Detectors by TCAD Simulation / by Ajay Kumar Srivastava.
- Format:
- Book
- Author/Creator:
- Srivastava, Ajay Kumar, author.
- Series:
- Physics and Astronomy (Springer-11651)
- Language:
- English
- Subjects (All):
- Particle acceleration.
- Computer-aided engineering.
- Physical measurements.
- Measurement.
- Solid state physics.
- Materials science.
- Nuclear physics.
- Heavy ions.
- Particle Acceleration and Detection, Beam Physics.
- Computer-Aided Engineering (CAD, CAE) and Design.
- Measurement Science and Instrumentation.
- Solid State Physics.
- Characterization and Evaluation of Materials.
- Nuclear Physics, Heavy Ions, Hadrons.
- Local Subjects:
- Particle Acceleration and Detection, Beam Physics.
- Computer-Aided Engineering (CAD, CAE) and Design.
- Measurement Science and Instrumentation.
- Solid State Physics.
- Characterization and Evaluation of Materials.
- Nuclear Physics, Heavy Ions, Hadrons.
- Physical Description:
- 1 online resource (XVII, 183 pages) : 106 illustrations, 77 illustrations in color
- Edition:
- First edition 2019.
- Contained In:
- Springer eBooks
- Place of Publication:
- Cham : Springer International Publishing : Imprint: Springer, 2019.
- System Details:
- text file PDF
- Summary:
- This book reviews the HL-LHC experiments and the fourth-generation photon science experiments, discussing the latest radiation hardening techniques, optimization of device and process parameters using TCAD simulation tools, and the experimental characterization required to develop rad-hard Si detectors for x-ray induced surface damage and bulk damage by hadronic irradiation. Consisting of eleven chapters, it introduces various types of strip and pixel detector designs for the current upgrade, radiation, and dynamic range requirement of the experiments, and presents an overview of radiation detectors, especially Si detectors. It also describes the design of pixel detectors, experiments and characterization of Si detectors. The book is intended for researchers and master's level students with an understanding of radiation detector physics. It provides a concept that uses TCAD simulation to optimize the electrical performance of the devices used in the harsh radiation environment of the colliders and at XFEL. .
- Contents:
- Development OF Si DETECTORS FOR THE CMS LHC Experiments
- Physics and Technology of Si Detectors.-Performance of MCz Si Material for p+nn+ and n+pp+ Si Sensor Design: Status and Development for HL-LHC: Status and Development for HL-LHC
- Development OF RADIATION HARD PIXEL DETECTORS FOR THE EUROPEAN XFEL
- T-CAD Simulation for the designing of detectors
- Development of Radiation Hard p+n Si Pixel Sensors for the European XFEL
- Analysis and Optimal Design of Radiation Hard p+n Si Pixel Detector for the Next generation Photon Science Experiments
- CapacitanceS in p+n silicon pixel sensors using 3-D TCAD simulation approach.-CHARACTERIZATION OF SI DETECTORS
- Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL
- Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation
- Appendices.
- Other Format:
- Printed edition:
- ISBN:
- 978-3-030-19531-1
- 9783030195311
- Access Restriction:
- Restricted for use by site license.
The Penn Libraries is committed to describing library materials using current, accurate, and responsible language. If you discover outdated or inaccurate language, please fill out this feedback form to report it and suggest alternative language.