Nonvolatile memory design : magnetic, resistive, and phase change / Hai Li, Yiran Chen.

Format:

Book

Author/Creator:

Li, Hai, 1975- author.

Contributor:

Chen, Yiran, 1976-

Language:

English

Subjects (All):

Semiconductor storage devices.

Magnetic memory (Computers).

Flash memories (Computers).

Change of state (Physics)--Industrial applications.

Change of state (Physics).

Physical Description:

1 online resource (200 p.)

Edition:

1st ed.

Place of Publication:

Boca Raton, Fla. : CRC Press, 2012.

Language Note:

English

Summary:

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances,

Contents:

1. Introduction to semiconductor memories

2. Phase change memory

3. Spin-transfer torque RAM

4. Resistive random access memory

5. Memristors

6. The future of nonvolatile memory.

Notes:

Description based upon print version of record.

Includes bibliographical references.

Description based on metadata supplied by the publisher and other sources.

ISBN:

1-315-21830-5

1-351-83419-3

1-280-12159-9

9786613525451

1-4398-0746-9

9781315218304

OCLC:

899154965