Advances in non-volatile memory and storage technology / edited by Yoshio Nishi.

Format:

Book

Author/Creator:

Nishi, Yoshio, 1940-

Contributor:

Nishi, Yoshio, editor.

Series:

Woodhead Publishing series in electronic and optical materials ; Number 64.

Woodhead Publishing Series in Electronic and Optical Materials ; Number 64

Language:

English

Subjects (All):

Random access memory.

Semiconductor storage devices.

Physical Description:

1 online resource (551 p.)

Edition:

1st edition

Place of Publication:

Cambridge, England ; Waltham, Massachusetts : Woodhead Publishing, 2014.

Language Note:

English

System Details:

text file

Summary:

Non-volatile memory retains its data when the power supply is removed and is thus invaluable for data storage. However, new solutions are needed for future development because solid-state non-volatile memory (flash), while useful, is limited. This book presents a systematic overview of the emerging technologies designed to address this issue. After an overview of the current market, part one introduces improvements in flash technologies including developments in 3D NAND flash technologies and flash memory for ultra high density storage devices. Part two looks at the advantages of des

Contents:

Cover; Advances in Non-volatile Memory and Storage Technology; Copyright; Contents; Contributor contact details; Woodhead Publishing Series in Electronic and Optical Materials; 1:Overview of nonvolatile memory technology: markets, technologies and trends; 1.1 Introduction; 1.2 The nonvolatile memory (NVM) market and applications; 1.3 Developments in charge storage memory technology; 1.4 Alternative memory storage concepts; 1.5 Beyond evolutionary architecture scaling; 1.6 Future trends; 1.7 References; Part I:Improvements in Flash technologies; 2:Developments in 3D-NAND Flash technology

2.1 Introduction2.2 2D-NAND Flash memory: limitations in scaling; 2.3 3D-NAND Flash memory with vertical channels; 2.4 3D-NAND Flash memory with horizontal channels; 2.5 Performance and electrical characteristics of different 3D-NAND Flash memory designs; 2.6 Conclusion; 2.7 References; 3:Multibit NAND Flash memories for ultra high density storage devices; 3.1 Introduction; 3.2 Array architectures; 3.3 Read techniques; 3.4 Program and erase algorithms; 3.5 Reliability issues in NAND Flash memory technologies; 3.6 Monolithic 3D integration; 3.7 Conclusion and future trends; 3.8 References

4: Improving embedded Flash memory technology: silicon and metal nanocrystals, engineered chargetrapping layers and splitgate memory architectures4.1 Introduction; 4.2 Silicon nanocrystals; 4.3 Metal nanocrystals; 4.4 Charge trap memories; 4.5 Splitgate charge trap memories; 4.6 Conclusion; 4.7 References; Part II:Phase change memory (PCM) and resistive random access memory (RRAM) technologies; 5:Phase change memory (PCM) materials and devices; 5.1 Introduction; 5.2 Phase change materials: structure and crystallization kinetics; 5.3 Properties of phase change materials

5.4 Phase change memory (PCM): principles and modeling5.5 PCM device design and engineering; 5.6 Conclusion and future trends; 5.7 References; 6:Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques; 6.1 Introduction; 6.2 Strategies for improving the PCM performance; 6.3 The use of nanowires; 6.4 Fabrication of phase change nanowires (PC-NWs): topdown approaches; 6.5 Fabrication of phase change nanowires (PC-NWs): bottomup approaches; 6.6 Fabrication of phase change nanowires (PC-NWs): other techniques; 6.7 Characterization of PC-NWs

6.8 Conclusion6.9 Sources of further information and advice; 6.10 References; 7:Nanowire phase change memory (PCM) technologies: properties and performance; 7.1 Introduction; 7.2 Melting temperature and crystallization kinetics; 7.3 Phase transition mechanisms; 7.4 Thermal properties; 7.5 Electrical properties; 7.6 Properties of coreshell structures; 7.7 Conclusion; 7.8 Acknowledgement; 7.9 Sources of further information and advice; 7.10 References; 8:Modeling of resistive random access memory (RRAM) switching mechanisms and memory structures; 8.1 Introduction

8.2 Methodology for ab initio modeling of Ox RRAMs

Notes:

Includes index.

Includes bibliographical references and index.

Description based on print version record.

ISBN:

9780857098092

0857098098

OCLC:

888415293