Nanoscale Semiconductor Memories : Technology and Applications / editors, Iniewski, Krzysztof.

Format:

Book

Author/Creator:

Kurinec, Santosh K., editor.

Contributor:

Iniewski, Krzysztof, editor.

Series:

Devices, Circuits, and Systems

Devices, circuits, and systems

Language:

English

Subjects (All):

Semiconductor storage devices.

Nanoelectronics.

Physical Description:

1 online resource (440 p.)

Edition:

1st edition

Place of Publication:

Boca Raton, FL : CRC Press, 2017.

Language Note:

English

System Details:

text file

Summary:

"Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems."--Provided by publisher.

Contents:

Front Cover; Contents; Preface; Editors; Contributors; Chapter 1: SRAM: The Benchmark of VLSI Technology; Chapter 2: Complete Guide to Multiple Upsets in SRAMs Processed in Decananometric CMOS Technologies; Chapter 3: Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation; Chapter 4: DRAM Technology; Chapter 5: Concepts of Capacitorless 1T-DRAM and Unified Memory on SOI; Chapter 6: A-RAM Family: Novel Capacitorless 1T-DRAM Cells for 22 nm Node and Beyond; Chapter 7: Quantum Dot-Based Flash Memories; Chapter 8: Spin-Transfer-Torque MRAM

Chapter 9: Magnetic Domain Wall "Racetrack" MemoryChapter 10: Phase-Change Memory Cell Model and Simulation; Chapter 11: Phase-Change Memory Devices and Electrothermal Modeling; Chapter 12: Nonvolatile Memory Device: Resistive Random Access Memory; Chapter 13: Nanoscale Resistive Random Access Memory: Materials, Devices, and Circuits; Back Cover

Notes:

Description based upon print version of record.

Includes bibliographical references at the end of each chapters.

Description based on print version record.

ISBN:

9781315216195

1315216191

9781466560604

1466560606

OCLC:

1023828025