Compact MOSFET models for VLSI design / A.B. Bhattacharyya.

Format:

Book

Author/Creator:

Bhattacharyya, A. B. (Amalendu Bhushan), author.

Language:

English

Subjects (All):

Integrated circuits--Very large scale integration--Design and construction.

Integrated circuits.

Metal oxide semiconductor field-effect transistors--Design and construction.

Metal oxide semiconductor field-effect transistors.

Physical Description:

1 online resource (458 p.)

Edition:

1st edition

Distribution:

[Piscataqay, New Jersey] : IEEE Xplore, [2009]

Other Title:

Compact Metal-Oxide-Semiconductor Field Effect Transistor models for Very Large Scale Integration design

Place of Publication:

Singapore ; John Wiley & Sons (Asia), c2009.

Language Note:

English

System Details:

text file

Summary:

Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design, A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models. . Adopts a unified approach to guide students through the confusing array of MOSFET models. Links MOS physics to device models to prepare practitioners for real-world design activities. Helps fabless designers bridge the gap with off-site foundries. Features rich coverage of: . quantum mechanical related phenomena. Si-Ge strained-Silicon substrate. non-classical structures such as Double Gate MOSFETs . Presents topics that will prepare readers for long-term developments in the field. Includes solutions in every chapter. Can be tailored for use among students and professionals of many levels. Comes with MATLAB code downloads for independent practice and advanced study This book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner's reference. Access the MATLAB code, solution manual, and lecture materials at the companion website: <a href="http://www.wiley.com/go/bhattacharyya">www.wiley.com/go/bhattacharyya</a>.

Contents:

Semiconductor physics review for MOSFET modeling

Ideal metal oxide semiconductor capacitor

Non-ideal and non-classical MOS capacitors

Long channel MOS transistor

The scaled MOS transistor

Quasistatic, non-quasistatic, and noise models

Quantum phenomena in MOS transistors

Non-classical MOSFET structures

Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate

Appendix B : features of select compact MOSFET models

Appendix C : PSP two-point collocation method.

Notes:

Description based upon print version of record.

Includes bibliographical references and index.

Description based on PDF viewed 12/21/2015.

ISBN:

9786612382109

9781282382107

1282382101

9780470823446

0470823445

9780470823439

0470823437

OCLC:

520990512

Publisher Number:

9786612382109