Nitride semiconductor light-emitting diodes (LEDs) : materials, technologies, and applications / edited by JianJang Huang, Hao-Chung Kuo, Shyh-Chiang Shen.

Format:

Book

Contributor:

Huang, JianJang, editor.

Kuo, Hao-Chung, editor.

Shen, Shyh-Chiang, editor.

Series:

Woodhead Publishing series in electronic and optical materials.

Woodhead Publishing Series in Electronic and Optical Materials

Language:

English

Subjects (All):

Nitrides.

Nitrides--Electric properties.

Physical Description:

1 online resource (826 pages, 17 numbered pages of plates) : illustrations (some color), tables, graphs.

Edition:

Second edition.

Place of Publication:

Duxford, England : Woodhead Publishing, 2018.

Summary:

Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. Features new chapters on laser lighting, addressing the latest advances on this topic Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting Provides a comprehensive discussion of gallium nitride on both silicon and sapphire substrates

Contents:

Front Cover

Nitride Semiconductor Light-Emitting Diodes (LEDs), Second Edition

Related titles

Nitride Semiconductor Light-Emitting Diodes (LEDs)

Copyright

Contents

List of contributors

Preface

One - Materials and fabrication

1 - Molecular beam epitaxy (MBE) growth of nitride semiconductors

1.1 Introduction

1.2 Molecular beam epitaxial (MBE) growth techniques

1.3 Plasma-assisted MBE (PAMBE) growth of nitride epilayers and quantum structures

1.3.1 Gallium nitride (GaN) epilayers

1.3.2 Aluminum nitride (AlN) epilayers

1.3.3 Indium gallium nitride (InGaN) and indium nitride (InN) epilayers

1.3.4 Nitride-based InGaN/GaN multi-quantum wells (MQWs)

1.3.5 Doping in nitride materials

1.3.6 Light emitters based on nitride MQWs

1.4 Nitride nanocolumn (NC) materials

1.4.1 Self-catalyst growth of GaN NCs using MBE

1.4.2 Aluminum gallium nitride (AlGaN) NCs

1.4.3 InN and InGaN NCs

1.4.4 Overgrowth of nitride NCs

1.5 Nitride nanostructures based on NCs

1.5.1 Quantum disks embedded in NCs

1.5.2 Core-shell NCs

1.5.3 Selective area growth of NCs

1.6 Conclusion

References

2 - MOCVD growth of nitride semiconductors

2.1 Introduction

2.2 Growth mechanism

2.3 Carbon incorporation and Mg doping of GaN

2.4 Blue and green MQW

2.5 UV materials growth

3 - GaN on sapphire substrates for visible light-emitting diodes

3.1 Importance and historical backgrounds of GaN epitaxial growth and sapphire substrates

3.1.1 Development history of epitaxial GaN on sapphire substrates for device-quality materials

3.1.1.1 Early development

3.1.1.2 Powder GaN

3.1.1.3 Thin-film GaN

3.1.1.4 Device-quality GaN epitaxial growth

3.2 Sapphire substrates

3.2.1 Properties of sapphire for substrates of III-N materials

3.2.1.1 Structural properties.

3.2.1.2 Chemical and thermal properties

3.2.2 Comparison to other substrates

3.2.2.1 SiC

3.2.2.2 Silicon (Si)

3.2.2.3 Other foreign substrates based on oxides, sulfides, and metals

3.2.2.4 Native substrates

3.3 Strained heteroepitaxial growth on sapphire substrates

3.3.1 Concept development and demonstration of strained heteroepitaxial growth

3.3.1.1 Two-step strained heteroepitaxy

3.3.2 Growth mechanism of GaN strained heteroepitaxial growth

3.3.3 Wafer bowing during the growth of GaN on sapphire

3.3.4 Buffer layer grown by physical vapor deposition

3.4 Epitaxial overgrowth of GaN on sapphire substrates

3.4.1 Selective area growth and epitaxial lateral overgrowth of GaN

3.4.2 Pendeo epitaxy of GaN

3.4.3 Growth of GaN on patterned sapphire substrates

3.5 GaN growth on nonpolar and semipolar directions

3.6 Outlook of LEDs on sapphire substrates

4 - Gallium nitride (GaN) on silicon substrates for LEDs

4.1 Introduction

4.2 An overview of gallium nitride (GaN) on silicon substrates

4.3 Silicon overview

4.3.1 Advantages of silicon

4.3.2 Crystallography

4.4 Challenges for the growth of GaN on silicon substrates

4.4.1 Thermal expansion mismatch between GaN and silicon

4.4.2 Thermal management

4.5 Buffer-layer strategies

4.5.1 Zinc oxide (ZnO), aluminum arsenide (AlAs) and other materials

4.5.2 Aluminum nitride (AlN) buffer layer

4.5.3 Superlattice structures

4.5.4 Atomic layer deposition (ALD) of Al2O3

4.6 Device technologies

4.6.1 Early device efforts

4.6.2 Progress in large-area substrates

4.6.3 Layer transfer

4.6.4 GaN LEDs on patterned silicon substrates

4.6.5 Semipolar and nonpolar GaN LEDs on silicon

4.6.6 GaN nanowires and nanorods on silicon

4.7 Conclusion

5 - Phosphors for white LEDs

5.1 Introduction.

5.2 Requirements for phosphors used in wLEDs

5.2.1 Principle on the fabrication of wLEDs

5.2.2 Key parameters for LEDs phosphors

5.3 The state-of-the-art phosphors for wLEDs

5.3.1 YAG:Ce phosphor and its modification

5.3.2 (Oxy)nitride phosphors

5.3.3 Silicates phosphors

5.3.4 Mn4+-activated fluoride phosphors

5.4 New advances of future phosphors for wLEDs

5.4.1 New LEDs phosphors with different host systems

5.4.1.1 Aluminates

5.4.1.2 Silicates

5.4.1.3 Sulfides

5.4.1.4 Phosphate

5.4.1.5 Borates

5.4.1.6 Narrow-band red nitride phosphors

5.4.1.7 Mn4+ doped red phosphors

5.4.1.8 Tungstates/molybdates based red phosphors

5.4.2 New LEDs phosphors by codoped activators and their energy transfer

5.4.2.1 ET models with Ce3+ as sensitizers

5.4.2.2 ET models using Eu2+ as sensitizers

5.4.2.2.1 Eu2+-Mn2+ system

5.4.2.2.2 Eu2+-Tb3+ system

5.4.2.2.3 Eu2+-Tb3+-Mn2+ system

5.4.2.2.4 Eu2+-Tb3+-Eu3+ system

5.4.2.2.5 Eu2+-Tb3+-Sm3+ system

5.5 Future development of wLEDs phosphors

Acknowledgments

6 - Recent development of fabrication technologies of nitride LEDs for performance improvement

6.1 Introduction

6.2 GaN-based flip-chip LEDs and flip-chip technology

6.2.1 Background of flip-chip LEDs

6.2.2 Flip-chip technology

6.3 GaN FCLEDs with textured micro-pillar arrays

6.4 GaN FCLEDs with a geometric sapphire shaping structure

6.5 GaN thin-film photonic crystal (PC) LEDs

6.5.1 Semiconductor wafer bonding

6.5.2 Epifilm-transferred technology

6.6 PC nanostructures and PC LEDs

6.7 Light emission characteristics of GaN PC TFLEDs

6.8 Conclusion

7 - Nanostructured LED

7.1 Introduction

7.2 Top-down technique for nanostructured LED.

7.2.1 Nanoscale epitaxial lateral overgrowth of GaN-based light emitting diodes on a SiO2 NAPSS

7.2.2 High extraction efficiency GaN-based LED on embedded SiO2 NR array and NPSS

7.2.3 Highly efficient and bright LEDs overgrown on GaN nanopillar substrates

7.2.4 Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy

7.3 Bottom-up technique for GaN nanopillar substrates prepared by molecular beam epitaxy

7.4 Other nanostructures of interest for LEDs

7.5 Conclusion

8 - Nonpolar and semipolar LEDs

8.1 Motivation: limitations of conventional c-plane LEDs

8.1.1 Quantum-confined Stark effect (QCSE)

8.1.2 The green gap

8.1.3 Carrier transport problems in multiple-quantum-well LEDs

8.1.4 Efficiency droop

8.1.5 Advantages of nonpolar and semipolar LEDs

8.2 Introduction to selected nonpolar and semipolar planes

8.2.1 Crystallography of wurtzite nitride

8.2.2 Changes in piezoelectric polarization charge with orientation

8.2.3 Influence of polarization on band bending, QCSE and carrier transport

8.2.4 Influence of anisotropic strain on E-k relaxation, band state mixing and optical polarization emission of light

8.3 Challenges in nonpolar and semipolar epitaxial growth

8.3.1 Heteroepitaxy of nonpolar and semipolar planes

8.3.2 Homoepitaxy and the need for bulk GaN substrates

8.3.3 Indium incorporation in nonpolar and semipolar planes

8.3.4 Morphology of nonpolar and semipolar epitaxy

8.3.5 Strain-induced defect generation in nonpolar and semipolar epitaxy

8.4 Light extraction for nonpolar and semipolar LEDs

8.4.1 Light extraction efficiency as a limiting factor

8.4.2 Increasing ηextr via surface roughening

8.4.3 Thin-film flip-chip LEDs

8.4.4 High light extraction packaging

Further reading.

Two - Performance of nitride LEDs

9 - Efficiency droop in GaInN/GaN LEDs

9.1 Introduction

9.1.1 GaInN/GaN LED efficiency

9.1.2 Efficiency droop in GaInN/GaN LEDs

9.2 Physical mechanisms of current droop in GaInN/GaN LEDs

9.2.1 Auger recombination

9.2.2 Carrier leakage

9.2.3 Other mechanisms

9.3 Progress of low-droop GaInN/GaN LEDs

9.3.1 Polar c-plane, nonpolar/semipolar GaN

9.3.2 Low-droop nonpolar/semipolar GaInN/GaN LEDs

9.3.2.1 m-plane, (112¯2) and (101¯1¯) GaInN/GaN LEDs

9.3.2.2 (202¯1¯) and (303¯1¯) GaInN/GaN LEDs

9.3.3 Modified ABC model for c-plane and semipolar GaInN/GaN LEDs

9.4 Thermal droop in GaInN/GaN LEDs

10 - Photonic crystal nitride LEDs

10.1 Introduction

10.1.1 Epitaxial materials

10.1.1.1 Factors affecting internal quantum efficiency

10.1.1.2 Base substrate material

10.1.2 Types of LED

10.1.2.1 P-side up lateral current spreading LEDs

10.1.2.2 N-side up LEDs

10.1.2.3 Patterned substrate LEDs

10.1.3 Light-trapping in LEDs

10.1.3.1 Radiometry and discussion of solid angle

10.1.4 Methods of improving light extraction from LEDs

10.2 Photonic crystal technology

10.2.1 The workings of PCs

10.2.2 Classes of PC device

10.2.3 Regular PCs versus photonic quasi-crystals (PQCs): effect of lattice symmetry

10.3 Improving LED extraction efficiency through PC surface patterning

10.3.1 Effect of etch depth

10.4 PC-enhanced light extraction in P-side up LEDs

10.4.1 Fabrication of P-side up LEDs

10.4.1.1 PC patterning options

10.4.1.2 Ultraviolet (UV) lithography

10.4.1.3 Nano-imprint lithography (UV-NIL)

10.4.1.4 Thermal nano-imprint lithography

10.4.1.5 UV-nano-imprint lithography (UV-NIL)

10.4.1.6 Electron-beam lithography

10.4.1.7 Photonic crystal etching

10.4.1.8 Current spreading layer.

10.4.1.9 MESAs and contacts.

Notes:

Includes bibliographical references at the end of each chapters and index.

Description based on online resource; title from PDF cover (ebrary, viewed November 22, 2017).

ISBN:

9780081019429

0081019424