Materials and processes for next generation lithography / edited by Alex Robinson and Richard Lawson.

Format:

Book

Contributor:

Robinson, Alex, editor.

Lawson, Richard, editor.

Series:

Frontiers of nanoscience ; Volume 11.

Frontiers of Nanoscience ; Volume 11

Language:

English

Subjects (All):

Lithography.

Physical Description:

1 online resource (636 pages) : illustrations.

Place of Publication:

Amsterdam, [Netherlands] ; Oxford, [England] ; Cambridge, Massachusetts : Elsevier, 2016.

Summary:

As the requirements of the semiconductor industry have become more demanding in terms of resolution and speed it has been necessary to push photoresist materials far beyond the capabilities previously envisioned. Currently there is significant worldwide research effort in to so called Next Generation Lithography techniques such as EUV lithography and multibeam electron beam lithography. These developments in both the industrial and the academic lithography arenas have led to the proliferation of numerous novel approaches to resist chemistry and ingenious extensions of traditional photopolymers. Currently most texts in this area focus on either lithography with perhaps one or two chapters on resists, or on traditional resist materials with relatively little consideration of new approaches. This book therefore aims to bring together the worlds foremost resist development scientists from the various community to produce in one place a definitive description of the many approaches to lithography fabrication. Assembles up-to-date information from the world's premier resist chemists and technique development lithographers on the properties and capabilities of the wide range of resist materials currently under investigation Includes information on processing and metrology techniques Brings together multiple approaches to litho pattern recording from academia and industry in one place

Contents:

Front Cover

Frontiers of Nanoscience: Materials and Processes for Next Generation Lithography

Frontiers of Nanoscience

Copyright

Contents

Contributors

Preface

Acknowledgments

List of abbreviations

1 - Overview of materials and processes for lithography

1.1 INTRODUCTION

1.2 OVERVIEW OF LITHOGRAPHY PROCESS

1.3 LITHOGRAPHIC EXPOSURE SOURCES AND PROCESSES

1.3.1 Ultraviolet Lithography

1.3.2 DUV Lithography-248nm and 193nm, Immersion, and Multiple Patterning

1.3.3 Extreme Ultraviolet Lithography

1.3.4 E-Beam Lithography

1.3.5 Other Lithography Processes-Ion Beam, Scanning Probe, and Nanoimprint

1.4 CHARACTERIZATION AND FIGURES OF MERIT FOR RESISTS

1.5 RESIST MATERIALS AND CHEMISTRY

1.5.1 Nonchemically Amplified Resists

1.5.2 Chemically Amplified Resists

1.5.3 Resist Physical Properties and Etch Resistance

1.5.4 Photoacid Generator Chemistry and Physics

1.5.5 Molecular Resists and Inorganic Resists

1.6 CHALLENGES IN MODERN RESIST DESIGN

1.6.1 Exposure Statistics and Shot Noise

1.6.2 Photoacid Diffusion

1.6.3 Resolution, Line Edge Roughness, and Sensitivity Trade-off

1.6.4 Pattern Collapse

1.7 CONCLUSIONS

REFERENCES

2 - Molecular excitation and relaxation of extreme ultraviolet lithography photoresists

2.1 INTRODUCTION

2.2 EXTREME ULTRAVIOLET MOLECULAR EXCITATION

2.2.1 Atomic Photoemission

2.2.2 Extreme Ultraviolet Sensitivity

2.2.3 Gas-Phase Molecular Spectroscopy

2.2.4 Molecular Photoemission

2.2.5 Photoemission and Shake-Up

2.2.6 Molecular Shape Resonances

2.3 EXTREME ULTRAVIOLET MOLECULAR RELAXATION

2.3.1 Electronic Relaxation in Atoms

2.3.2 Resonant Photoabsorption

2.3.3 Atomic Relaxation and Fragmentation in Molecules.

2.4 EXTREME ULTRAVIOLET PROCESSES IN CONDENSED FILMS

2.4.1 Extreme Ultraviolet Molecular Excitation in Condensed Resist Films

2.4.2 Molecular Relaxation in Condensed Films

2.4.3 Reaction Cascades in Condensed Films

2.5 OUTLOOK AND CONCLUSIONS

2.5.1 Differences in Extreme Ultraviolet Lithography and Electron Beam Lithography

2.5.2 Outlook and Research Needs

3 - Theory: electron-induced chemistry

3.1 INTRODUCTION

3.2 MECHANISMS FOR ELECTRON-INDUCED REACTIONS

3.2.1 Electron Attachment

3.2.2 Electron Impact Ionization

3.2.3 Electron Impact Excitation

3.3 POTENTIAL ROLE IN LITHOGRAPHY

3.3.1 Cross Section

3.3.2 Spatial Resolution

3.3.3 Rational Design of Novel Materials

3.4 CONCLUSIONS

4 - EUV lithography process challenges

4.1 INTRODUCTION

4.2 EUV-IL AS A CHARACTERIZATION AND NANOPATTERNING TOOL

4.2.1 Extreme Ultraviolet Interference Lithography

4.2.2 Achromatic Diffraction Grating-Based EUV-IL

4.2.3 EUV-IL Challenges

4.2.4 Achromatic Talbot Lithography

4.3 RESIST MATERIAL CHALLENGES

4.3.1 Introduction to Chemically Amplified Resists

4.3.2 RLS Tradeoff

4.3.3 Resist Absorption

4.3.4 Image Blur

4.3.5 Quantum Efficiency

4.3.6 Acid Diffusion

4.3.7 PEB and Development

4.3.8 Contrast Curve

4.3.9 Pattern Collapse

4.3.10 Pattern Collapse Mitigation Strategies

4.4 CONCLUSIONS

5 - EUV lithography patterning challenges

5.1 EXTREME ULTRAVIOLET LITHOGRAPHY: PUSHING OPTICAL LITHOGRAPHY TO THE EXTREME

5.1.1 Introduction

5.1.2 Extreme Ultraviolet Optics and Mask

5.1.3 Sensitivity and Source Power

5.2 EXTREME ULTRAVIOLET RESIST STOCHASTICS

5.2.1 Multivariate Poisson Propagation Model

5.2.2 Material Versus Photon Stochastics.

5.2.3 Comparing Current Resist Performance to Stochastic Limits

5.3 EXTREME ULTRAVIOLET RESIST PROGRESS, A HISTORICAL PERSPECTIVE

5.3.1 Line Edge Roughness and Sensitivity

5.3.2 Resolution Progress

5.3.3 RLS Progress

6 - The chemistry and application of nonchemically am

6.1 INTRODUCTION

6.2 THE CEILING TEMPERATURE

6.3 THE CHEMISTRY OF SPECIFIC POLYMER RESIST SYSTEMS

6.3.1 Polymethacrylates

6.3.1.1 Negative-Tone Methacrylate Resists

6.3.2 Polysulfones

6.3.3 Polyaldehydes

6.3.4 Polyesters and Polycarbonates

6.4 SUMMARY

7 - Chemically amplified resists and acid amplifiers

7.1 EXTREME ULTRAVIOLET RESISTS

7.2 EUV CAR RESISTS

7.2.1 EUV CAR Resist Reaction Mechanism

7.2.2 Resolution-Line Width Roughness Sensitivity Tradeoff

7.2.3 Positive-Tone EUV CAR Resists

7.2.4 Negative-Tone Developable Extreme Ultraviolet Resists

7.3 CONCLUSION

8 - Negative-tone organic molecular resists

8.1 INTRODUCTION

8.2 FULLERENE RESISTS

8.3 TRIPHENYLENE RESISTS

8.4 CALIXARENE RESISTS

8.5 NORIA RESISTS

8.6 POLYPHENOL RESISTS

8.7 CATIONIC POLYMERIZATION AND CROSS-LINKING

8.7.1 General Information and Background

8.7.2 FTIR Characterization of Epoxide Functionalized Molecular Resists

8.7.3 Comparison of Epoxide (Oxirane) and Oxetane Functional Groups

8.7.4 Effect of Number of Functional Groups and Comparison to Polymeric Resists

8.7.5 Methods of Controlling Cationic Polymerization and/or Cross-linking

8.7.6 Underlayers for Epoxide Functionalized Molecular Resists

8.7.7 Aqueous Base Developed Epoxide Molecular Resists

8.8 OTHER RESISTS

8.9 SUMMARY

9 - Positive molecular resists

9.1 INTRODUCTION

9.2 GENERAL CHARACTERISTICS

9.3 MOLECULAR RESIST FAMILIES

9.3.1 Star-Shaped Molecules

9.3.2 Polyphenols.

9.3.3 Anthracene and Fullerene Derivatives

9.3.4 Cycloaliphatic Derivatives

9.3.5 Cyclic Molecules-Calixarenes and Related Structures

9.3.6 Ladder Molecules-Noria

9.4 CURRENT STATUS, NEW CONCEPTS, AND CHALLENGES

9.5 CONCLUSIONS

10 - Mainstreaming inorganic metal-oxide resists for high-resolution lithography

10.1 METAL-OXIDE RESISTS

10.1.1 Oxo-Hydroxo Nanoclusters

10.2 HYDROGEN SILSESQUIOXANE

10.2.1 HSQ Spin and Bake

10.2.1.1 HSQ as a low-κ dielectric

10.2.1.2 HSQ as resist

10.2.1.3 Improving reproducibility: issues due to delay between spin/bake and exposure

10.2.2 HSQ Exposure Mechanism

10.2.3 HSQ Development Mechanism

10.2.4 HSQ Overall Assessment

10.3 HIGH-Z NANOCLUSTER PATTERNING

10.3.1 HafSOx Solution Chemistry

10.3.2 HafSOx Thin-Film Deposition, Bake, and Expose

10.3.3 HafSOx Development

10.3.4 HafSOx Summary

10.3.5 Advances of Lithographic Resolution in High-Z Metal-Oxide Resists

10.4 METAL-OXIDE NANOCLUSTER PATTERNING MATERIALS-PRESENT AND FUTURE

11 - Molecular organometallic resists for EUV (MORE)

11.1 INTRODUCTION

11.2 SURVEY OF SIMPLE METAL COMPLEXES

11.3 BISMUTH COMPOUNDS

11.3.1 Synthesis of Bismuth-Phenyl Oligomers

11.3.2 Approach 1: Noncatalytic Acid Cleavage of Bismuth-Phenyl Oligomers

11.3.3 Approach 2: Oxidized Bismuth-Phenyl Oligomers

11.3.4 Outgassing Results for Acetate Material

11.4 PALLADIUM AND PLATINUM COMPOUNDS

11.4.1 Platinum and Palladium Complexes With Known Photosensitive Moieties: Azide, Carbonate, and Oxalate

11.4.1.1 Azides

11.4.1.2 Carbonates

11.4.1.3 Oxalates

11.4.1.4 Effect of metal and phosphine ligands

11.4.1.5 Photomechanistic studies

11.5 TIN COMPOUNDS

11.5.1 Sn-1 Compounds

11.5.1.1 Development of Sn-1 solubility hypothesis

11.5.1.2 Sn-1 lithographic evaluation.

11.5.1.2.1 Dependence of molecular weight on photosensitivity (EMAX)

11.5.1.2.2 ESIZE dependence on molecular weight

11.5.1.2.3 Tincarbon bond strength and EMAX dependence

11.5.1.2.4 Imaging of Sn-1 compounds

11.5.1.2.5 Fast resists with ligands containing olefins

11.5.2 Sn-12 Clusters

11.5.2.1 Anionic ligand decomposition

11.5.2.2 Homolytic cleavage of the tincarbon bond

11.5.2.3 Interpretation of results

11.6 METAL OXALATE COMPLEXES

11.6.1 Ligand Structure

11.6.2 Central Metal

11.6.3 Oxalate Loading

11.6.4 Optimization Studies and Champion Results

11.7 CONCLUSIONS

11.7.1 Bismuth

11.7.2 Palladium and Platinum

11.7.3 Tin (Sn-1)

11.7.4 Tin (Sn-12)

11.7.5 Chromium, Iron, and Cobalt

12 - SML electron beam resist: ultra-high aspect ratio nanolithography

12.1 INTRODUCTION

12.2 PHOTOMASK PRODUCTION

12.3 ELECTRON BEAM RESIST OPTICAL PROPERTIES

12.4 SML2000 ELECTRON BEAM PERFORMANCE

12.5 PUSHING THE RESOLUTION LIMITS

12.6 SUMMARY

13 - Alternative resist approaches

13.1 INTRODUCTION

13.2 NOVEL APPROACHES FOR EUV

13.2.1 Absorbance

13.2.2 Low-Absorbance Approaches

13.2.3 High-Absorbance Approaches

13.2.4 Organic-Metal Oxide Composites

13.3 CONCLUSIONS

14 - Next generation lithography-the rise of unconventional methods?

14.1 THE ULTIMATE DRIVING FORCE: MOORE'S LAW

14.1.1 The Semiconductor Industry: Where We Are and Where We Are Going?

14.1.2 The Workhorse of the Semiconductor Industry and Its Physical Limitations

14.2 BEYOND OPTICAL: STATE-OF-THE-ART IN NGL

14.2.1 X-Ray and EUV Lithography

14.2.2 Nanoimprint Lithography

14.2.3 Maskless Lithography (ML2)

14.3 BEYOND SCALING-POST SI-MOSFET/CMOS TECHNOLOGY

15 - Tip-based nanolithography methods and materials.

15.1 SCANNING PROBE LITHOGRAPHY.

Notes:

Includes bibliographical references at the end of each chapters and index.

Description based on online resource; title from PDF title page (ebrary, viewed November 18, 2016).

ISBN:

9780081003541

0081003544