Wide band gap semiconductor nanowires. Volume 1, Low-dimensionality related effects and growth / edited by Vincent Consonni, Guy Feuillet.

Format:

Book

Contributor:

Consonni, Vincent, e.

Feuillet, Guy, editor.

Series:

Electronics engineering series (London, England)

Electronics Engineering Series

Language:

English

Subjects (All):

Optoelectronic devices.

Nanowires.

Physical Description:

1 online resource (382 pages) : illustrations, graphs.

Edition:

1st ed.

Place of Publication:

London, [England] ; Hoboken, New Jersey : ISTE : Wiley, 2014.

Summary:

GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.

Contents:

Cover

Title Page

Copyright

Contents

Preface

PART 1: GaN and ZnO Nanowires: Low-dimensionality Effects

Chapter 1: Quantum and Optical Confinement

1.1. Introduction

1.2. All-optical integrated circuits with Bose exciton polaritons

1.3. High efficiency single photon sources

1.4. High efficiency solar photovoltaics

1.4.1. Potential photovoltaic benefits of the nanowire geometry

1.4.2. Interests of wide band gap semiconductor photovoltaics

1.5. Conclusion

1.6. Bibliography

Chapter 2: Stress Relaxation in Nanowires with Heterostructures

2.1. Introduction

2.1.1. Scope

2.1.2. Stress relaxation

2.1.3. Nanowire specificities

2.2. Calculation and measurement of elastic strain in nanowires

2.2.1. Calculation of elastic strain

2.2.2. Measurement of elastic strain

2.3. Core-shell heterostructures

2.3.1. Elastic relaxation in core-shell heterostructures

2.3.2. Plastic relaxation and critical parameters in core-shell heterostructures

2.3.2.1. Theoretical considerations

2.3.2.2. Experiments

2.4. Axial heterostructures

2.4.1. Elastic relaxation in axial heterostructures

2.4.2. Critical dimensions for axial heterostructures

2.4.2.1. Theoretical considerations

2.4.2.2. Experiments

2.5. Other possible modes of stress relaxation in nanowires with heterostructures

2.6. Summary and conclusions

2.7. Bibliography

Chapter 3: Surface-related Optical Properties of GaN-Based Nanowires

3.1. Introduction

3.2. Specific exciton and donor states related to surfaces

3.3. Non-radiative surface recombination

3.4. Influence of surface photochemical activity on nitride nanowire optical properties

3.5. Summary

3.6. Bibliography

Chapter 4: Surface Related Optical Properties of ZnO Nanowires

4.1. Introduction

4.2. Surface excitons in ZnO nanowires.

4.3. Surface-related defect luminescence in ZnO nanowires

4.4. Surface functionalization of ZnO nanowires with colloidal quantum dots

4.5. Other surface-related effects in ZnO nanowires

4.6. Conclusion

4.7. Bibliography

Chapter 5: Doping and Transport

5.1. Introduction

5.2. Advanced lithography processes for direct wide band gap nanowire and microwire devices

5.3. Electrical transport properties of single wire: ZnO nanowire and GaN microwire

5.3.1. Electrical transport measurements

5.3.1.1. General remarks about near-surface band bending

5.3.1.2. Resistivity measurement: two-probe and four-probe configurations

5.3.1.3. Field-effect transistor characteristics

5.3.1.4. Thermoelectric measurement: Seebeck effect

5.3.2. Mobility versus doping

5.4. Local probe and mapping of the electric field: cathodoluminescence

5.5. Conclusion and perspectives

5.6. Bibliography

Chapter 6: Microstructure of Group III-N Nanowires

6.1. Introduction

6.2. Structural properties

6.2.1. Crystal structure

6.2.2. Nanowire morphology

6.2.3. Macroscopic and microscopic strain

6.3. Polarity

Channeling-enhanced EELS

6.4. Extended defects in nanowires

6.4.1. Stacking faults

6.4.2. Inversion domain boundaries

6.5. Interfaces and heterostructures

6.5.1. Interface between III-N nanowire and substrate

GaN nanowires on Si(111)

InN nanowires on AlN buffer

6.5.2. Axial nanowire heterostructure: (In,GaN)/GaN case study

6.6. Conclusions

6.7. Bibliography

PART 2: Nucleation and Growth Mechanisms of GaN and ZnO Nanowires

Chapter 7: Ni Collector-Induced Growth of GaN Nanowires on C-Plane Sapphire by Plasma-Assisted Molecular Beam Epitaxy

7.1. Introduction

7.2. Experimental description

7.3. Ni-induced GaN nanowire nucleation

7.4. Ni-induced GaN nanowire growth mechanism.

7.5. Ni-induced GaN nanowire structural and optical properties

7.6. Conclusion

7.7. Acknowledgments

7.8. Bibliography

Chapter 8: Self-Induced Growth of GaN Nanowires by Plasma-assisted Molecular Beam Epitaxy

8.1. Introduction

8.2. General principles

8.2.1. MBE chamber

8.2.2. Typical growth conditions

8.2.3. Nucleation surface effects

8.3. Nucleation phase

8.3.1. Incubation period

8.3.1.1. Experimental observations

8.3.1.2. Theoretical modeling

8.3.2. Transition period

8.3.2.1. Experimental observations

8.3.2.2. Theoretical modeling

8.4. Growth phase

8.4.1. Elongation period

8.4.1.1. Role of adatom surface diffusion and incorporation rates

8.4.1.2. Role of MBE chamber geometry

8.4.1.3. Experimental observations and theoretical modeling

8.4.1.4. Shadowing and collective effects in the NW ensemble

8.4.2. Radial growth

8.4.3. Coalescence period

8.4.4. Density effects

8.4.5. Polarity effects

8.5. Conclusion

8.6. Acknowledgments

8.7. Bibliography

Chapter 9: Selective Area Growth of GaN Nanowires by Plasma-Assisted Molecular Beam Epitaxy

9.1. Introduction

9.2. Mask preparation

9.3. Selectivity, nucleation mechanism and morphology control of the nanocolumns

9.4. Growth of ordered NCs for LEDs applications

9.4.1. InGaN with single color emission

9.4.2. InGaN with a gradient In composition for white light emission

9.4.3. RGB structures for white light emission

9.5. Growth of ordered GaN nanocolumns on non-polar and semi-polar directions

9.6. Summary

9.7. Bibliography

Chapter 10: Metal-Organic Vapor Phase Epitaxy Growth of GaN Nanorods

10.1. Introduction

10.2. Catalyst-assisted growth

10.3. Catalyst-free and self-organized growth

10.4. Selected-area growth

10.5. Discussion and conclusion

10.6. Bibliography.

Chapter 11: Metal-Organic Chemical Vapor Deposition Growth of ZnO Nanowires

11.1. Introduction

11.2. Thermodynamics

11.3. Growth of ZnO nanowires

11.4. Spontaneous growth of ZnO nanowires: growth condition effects

11.4.1. O/Zn (RVI/II) ratio

11.4.2. Substrates

11.4.3. Growth temperature

11.4.4. Pressure

11.4.5. Supersaturation and growth rate

11.4.6. Structural characterization and growth mechanisms

11.5. Selective area growth of ZnO nanowires

11.6. Catalyst-assisted growth of ZnO NWs

11.6.1. Evidence of the catalytic effect

11.6.2. MOCVD growth of catalyst-assisted ZnO nanowires

11.6.3. Formation of ZnO nanoribbons

11.6.4. Discussion of the catalyzed-growth mechanisms: VLS or not?

11.6.5. Polarity of VLS grown ZnO nanowires

11.7. Acknowledgements

11.8. Bibliography

Chapter 12: Pulsed-Laser Deposition of ZnO Nanowires

12.1. Introduction

12.2. Principles of high-pressure and hot-walled pulsed-laser deposition

12.3. Tuning the nanowire morphology

12.4. Doped binary nanowires and ternary alloy nanowires

12.5. Fabrication of nanowire heterostructures

12.6. Summary and outlook

12.7. Bibliography

Chapter 13: Preparation of ZnO Nanorods and Nanowires by Wet Chemistry

13.1. Introduction

13.2. Preparation of ZnO nanorods and nanowires by chemical bath deposition and hydrothermal techniques

13.2.1. Principle

13.2.2. Growth of ZnO nanostructure in bulk solution

13.2.2.1. Variation of the degree of supersaturation

13.2.2.2. Control of the grain shape by use of additives in the solution

13.2.3. Chemical growth of ZnO nanowire/nanorod arrays on substrate

13.2.3.1. Influence of the substrate on the ZnO nucleation and growth.

13.2.3.1.1. Growth on amorphous and polycrystalline substrates

13.2.3.1.2. Use of seeded surfaces.

13.2.3.1.3. Epitaxial growth of ZnO nanorods and nanowires on single-crystalline substrate

13.2.3.2. Increasing the NW length and layer roughness

13.2.3.3. Arrays of microtubes

13.2.3.4. Patterning of ZnO nanostructures

13.3. Preparation of ZnO nanorods and nanowires by electrodeposition

13.3.1. Principles of ZnO electrodeposition

13.3.2. ZnO growth mechanism

13.3.2.1. Molecular oxygen precursor

13.3.2.2. Hydrogen peroxide precursor

13.3.2.3. Nitrate ion precursor

13.3.3. Electrochemical growth of ZnO nanorod and nanowire arrayed layers

13.3.4. Substrate surface treatment and seed layers

13.3.5. Electrochemical growth of ZnO nanowires on templates

13.3.6. Effect of electrochemical bath composition and use of cation additives for doping

13.4. Applications of ZnO nanorods/nanowires prepared by wet chemistry and by electrochemistry

13.5. Conclusions

13.6. Bibliography

List of Authors.

Notes:

Includes bibliographical references at the end of each chapters.

Description based on print version record.

ISBN:

9781118984314

1118984315

9781118984321

1118984323

9781118984307

1118984307

OCLC:

891381640