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2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) : 7-10 Oct. 2013, Monterey, California, USA / Institute of Electrical and Electronics Engineers.
- Format:
- Book
- Author/Creator:
- Institute of Electrical and Electronics Engineers, author, issuing body.
- Language:
- English
- Subjects (All):
- Microelectronics--Congresses.
- Microelectronics.
- Semiconductors--Congresses.
- Semiconductors.
- Physical Description:
- 1 online resource (212 pages) : illustrations
- Other Title:
- 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
- SOI-3D-Subthreshold Microelectronics Technology Unified Conference
- 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S 2013)
- 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S 2013)/frim
- Place of Publication:
- Monterey, California : IEEE, 2013.
- Contents:
- Conference committee
- List of presentations
- General chairman's welcome
- Author index
- Introduction and history [of the IEEE S3S Conference]
- [Title page]
- Fully-depleted-silicon-on-insulator from R&D concept to industrial reality
- Practical process flows for monolithic 3D
- 3D integration of high mobility InGaAs nFETs and Ge pFETs for ultra low power and high performance CMOS
- 3D-enabled heterogeneous integrated circuits
- Three-dimensional wafer stacking using Cu TSV integrated with 45nm high performance SOI-CMOS embedded DRAM technology
- 3D hetero-integration technology with backside TSV and reliability challenges
- Fine grained 3D cache architecture using high density TSVs
- SOI lateral bipolar transistor with drive current >3mA/µm
- Three-dimensional integrated circuits with NFET and PFET on separate layers fabricated by low temperature Au/SiO2 hybrid bonding
- Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs.
- Notes:
- Description based on publisher supplied metadata and other sources.
- ISBN:
- 9781479913619
- 1479913618
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