1 option
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) : New Brunswick, New Jersey, USA, 25-27 September 2016 / IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
- Format:
- Book
- Conference/Event
- Conference Name:
- IEEE Bipolar/BiCMOS Circuits and Technology Meeting, author.
- Language:
- English
- Subjects (All):
- Bipolar integrated circuits--Congresses.
- Bipolar integrated circuits.
- Bipolar transistors--Congresses.
- Bipolar transistors.
- Metal oxide semiconductors, Complementary--Congresses.
- Metal oxide semiconductors, Complementary.
- Physical Description:
- 1 online resource (177 pages) : illustrations
- Other Title:
- 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
- Place of Publication:
- Piscataway, NJ : IEEE, 2016.
- Summary:
- Annotation The Bipolar BiCMOS Circuits and Technology Meeting (BCTM) is the premier international forum for bipolar BiCMOS research for technical communication focused on the needs and interests of the bipolar and BiCMOS community Papers covering the design, performance, fabrication, testing and application of bipolar and BiCMOS integrated circuits, bipolar phenomena, and discrete bipolar devices are solicited.
- Contents:
- A 4-GHz 32-bit direct digital frequency synthesizer in 0.25 µm SiGe HBT with SFDR > 46 dBc up to Nyquist bandwidth
- Ge-on-insulator lateral bipolar transistors
- A 76- to 81-GHz packaged single-chip transceiver for automotive radar
- Why is there no internal collector resistance in HICUM?
- A HICUM/L2 model for high-voltage BJTs
- Advantages of SiGe-pnp over Si-pnp for analog and RF enhanced CBiCMOS and Complementary Bipolar design usage
- Novel npn bipolar transistor with high gain, high Early voltage, and high BVceo in an advanced SmartMOS technology
- DC and RF breakdown voltage characteristics of SiGe HBTs for WiFi PA applications
- A passive total power radiometer in 0.25 µm SiGe BiCMOS for millimeter-wave imaging
- Current regulator with energy limitation in the unpowered state featuring bipolar discharge path
- A 90nm BiCMOS technology featuring 400GHz fMAX SiGe:C HBT
- The broadband Darlington amplifier as a simple benchmark circuit for compact model verification at mm-wave frequency
- An improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs
- Scalable sensor platform with multi-purpose fully-differential 61 and 122 GHz transceivers for MIMO radar applications
- Advanced Si/SiGe HBT architecture for 28-nm FD-SOI BiCMOS
- On the use of vertical superjunction collectors for enhanced breakdown performance in SiGe HBTs
- The effect of strong equalization in high-speed VCSEL-based optical communications up to 48 Gbit/s
- Analysis and modeling of the long-term ageing rate of SiGe HBTs under mixed-mode stress
- Co-simulation and co-design of chip-package-board interfaces in highly-integrated RF systems
- A 50 Gb/s TIA in 0.25µm SiGe:C BiCMOS in folded cascode architecture with pnp HBTs
- Wideband active bi-directional SiGe digital step attenuator using an active DPDT switch
- Linear ultra-broadband NPN-only analog correlator at 33 Gbps in 130 nm SiGe BiCMOS technology
- Investigation of double-emitter reduced-surface-field horizontal current bipolar transistor breakdown mechanisms
- Hybrid small-signal π-model for the lateral NQS effect in SiGe HBTs
- A 162 GHz power amplifier with 14 dBm output power
- A low phase noise tri-band LO generation for Ku and E band radios for backhauling Point-to-Point applications
- The impacts of base bias resistor and LTE 16QAM signal bandwidth on high-efficiency linear SiGe power amplifier design
- A 30GS/s 6bit SiGe ADC with input bandwidth over 18GHz and full data rate interface
- Modeling of high-current damage in SiGe HBTs under pulsed stress
- Side-use of a Ge p-i-n photo diode for electrical application in a photonic BiCMOS technology
- SiGe BiCMOS technologies for high-speed and high-volume optical interconnect applications
- Beyond the boundaries: Enabling new circuit opportunities by using SiGe HBTs in counterintuitive ways
- THz bandwidth InP HBT technologies and heterogeneous integration with Si CMOS
- Applying bipolar transistors in dynamic power supply transmitters
- Injection locking circuit techniques for high-efficiency millimeter-wave transmitter arrays in SiGe and CMOS SOI processes
- BCTM, thirty years of success
- Low gate drive IGBT enabling direct control through Digital Isolator power.
- Notes:
- Description based on publisher supplied metadata and other sources.
- ISBN:
- 1-5090-0484-X
The Penn Libraries is committed to describing library materials using current, accurate, and responsible language. If you discover outdated or inaccurate language, please fill out this feedback form to report it and suggest alternative language.