2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) : Austin, TX, USA, 23-26 October 2016 / IEEE Compound Semiconductor Integrated Circuit Symposium.

Format:

Book

Conference/Event

Conference Name:

IEEE Compound Semiconductor Integrated Circuit Symposium, author.

Language:

English

Subjects (All):

Compound semiconductors--Congresses.

Compound semiconductors.

Integrated circuits--Congresses.

Integrated circuits.

Physical Description:

1 online resource (313 pages) : illustrations

Other Title:

2016 IEEE Compound Semiconductor Integrated Circuit Symposium

Place of Publication:

Piscataway, NJ : IEEE, 2016.

Summary:

Annotation CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano scale CMOS, and graphene semiconductor technologies and their application to RF, mm wave, high speed, and energy conversion circuits and systems Specific technical areas of interest include Innovative device concepts in emerging technologies, Nitrides, InP, III V on Si, Ge on Si, Graphene, Analog, RF, mixed signal, mm wave, THz circuit blocks and ICs in III V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High speed digital systems, Fiber optics and photonics, Device and circuit modeling EM and EDA tools, Thermal simulation and advanced packaging of high power devices and ICs, Device and IC manufacturing processes.

Contents:

SESSION A: Plenary Session

SESSION B: Reconfigurable RF Components and Systems

SESSION C: GaN HEMT Physical Characterization

SESSION D: Millimeter-wave Circuits Using State-of-the-Art Transistors

SESSION E: Mixed-Signal Circuits and Interconnects for 100G+ Systems

SESSION F: Broadband THz Systems and Applications

SESSION G: GaN on Diamond

SESSION H: High-Speed Circuits for Optical and Electrical Links

SESSION I: High-Power Amplifier Technology

SESSION J: Late Breaking News I

SESSION K : Noise and Non-Linear Modeling

SESSION L: GaN HEMT Modeling

SESSION M: E- and W-band Technology and Circuits

SESSION N: High Power GaN

SESSION O: Components for Advanced Optical Front-End

SESSION P: Low Noise Amplifiers

SESSION Q: Next Generation Device Technologies

SESSION R: Late-Breaking News II

SESSION S: Late-Breaking News III

Author Index.

Notes:

Description based on publisher supplied metadata and other sources.

Includes index.

ISBN:

1-5090-1608-2