Advances in chemical mechanical planarization (CMP) / edited by Suryadevara Babu.

Format:

Book

Contributor:

Babu, Suryadevara, editor.

Series:

Woodhead Publishing series in electronic and optical materials ; Number 86.

Woodhead Publishing Series in Electronic and Optical Materials ; Number 86

Language:

English

Subjects (All):

Chemical mechanical planarization.

Nanoelectronics.

Microelectronics.

Physical Description:

1 online resource (538 p.)

Place of Publication:

Cambridge, England ; Waltham, Massachusetts ; Kidlington, England : Woodhead Publishing, 2016.

Language Note:

English

Summary:

Advances in Chemical Mechanical Planarization (CMP) provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The technology has grown to encompass the removal and planarization of multiple metal and dielectric materials and layers both at the device and the metallization levels, using different tools and parameters, requiring improvements in the control of topography and defects. This important book offers a systematic review of fundamentals and advances in the area. Part One covers CMP of dielectric and metal films, with chapters focusing on the use of particular techniques and processes, and on CMP of particular various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. Part Two addresses consumables and process control for improved CMP, and includes chapters on the preparation and characterization of slurry, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes, and approaches for defection characterization, mitigation, and reduction.-- Source other than the Library of Congress.

Contents:

Front Cover; Related titles; Advances in Chemical Mechanical Planarization (CMP); Copyright; Contents; List of contributors; Woodhead Publishing Series in Electronic and Optical Materials; Introduction; One - CMP of dielectric and metal films; 1 - Chemical and physical mechanisms of dielectric chemical mechanical polishing (CMP); 1.1 Introduction; 1.2 History of dielectric CMP; 1.3 Material removal mechanism of dielectric CMP; 1.4 Defectivity of dielectric CMP; 1.5 Major applications of dielectric CMP; 1.5.1 STI CMP; 1.5.2 Oxide ILD CMP; 1.5.3 Poly open CMP (POC) process; 1.5.4 SiN CMP

1.6 Future of dielectric CMPReferences; 2 - Copper chemical mechanical planarization (Cu CMP) challenges in 22nm back-end-of-line (BEOL) and beyond; 2.1 Introduction; 2.2 Factors that affect Cu CMP at the 22nm node and beyond; 2.2.1 Interconnect scaling; 2.2.2 Copper metal resistivity; 2.2.3 Low-k and ultra-low-k dielectrics; 2.2.4 Air-gap interconnects; 2.2.5 Diffusion barrier/Cu seed stack layers; 2.2.6 Post-CMP cleaning and defectivity; 2.3 Conclusions; Acknowledgments; References

3 - Electrochemical techniques and their applications for chemical mechanical planarization (CMP) of metal films3.1 Introduction; 3.2 Chemical component of metal CMP; 3.2.1 Surface modifying roles of slurry additives; 3.2.2 Controlling material removal in chemically promoted CMP of metal films; 3.3 Electrochemical basis of metal CMP; 3.3.1 CMP-specific effects of electrochemical origin; 3.3.2 Mixed potential mechanism of surface reactions in CMP; 3.3.3 Corrosion-erosion characteristics of material removal in metal CMP; 3.3.4 Effects of bimetallic corrosion

3.3.5 Considerations of Pourbaix diagrams3.3.6 Electrochemical mechanical planarization (ECMP); 3.4 Experimental considerations; 3.4.1 Electrochemical techniques for studying metal CMP systems; 3.4.2 Instrumentation; 3.4.3 Electrochemical test conditions and considerations for data analysis; 3.5 Illustrative applications; 3.5.1 Potentiodynamic measurements of corrosion parameters; 3.5.2 Direct measurements of galvanic corrosion parameters; 3.5.3 Measurement and utility of linear polarization resistance (LPR); 3.5.4 Comparing open circuit and corrosion potentials

3.5.5 Potentiostatic current transient measurements for testing individual slurry additives3.5.6 EIS as a probe of CMP-specific surface reactions; 3.5.7 Analysis of corrosion mechanisms from electrochemical noise (ECN); 3.5.8 Pulsed voltage perturbation technique; 3.5.9 Effects of triboelectrochemical corrosion; 3.5.10 Electrochemical techniques for studying post-CMP cleaning formulations; 3.6 Conclusions; Acknowledgments; References; 4 - Ultra low-k materials and chemical mechanical planarization (CMP); 4.1 Integration of ultra-low-k materials in semiconductor devices

4.1.1 Integrated circuit performance improvement

Notes:

Description based upon print version of record.

Includes bibliographical references at the end of each chapters and index.

Description based on online resource; title from PDF title page (ebrary, viewed January 20, 2016).

ISBN:

9780081002186

0081002181