Fabrication of GaAs devices / by Albert G. Baca and Carol I.H. Ashby.

Format:

Book

Author/Creator:

Baca, A. G.

Contributor:

Ashby, Carol Iris Hill, 1953-

Institution of Electrical Engineers.

Series:

SPE processing series ; no. 6.

Processing series ; no. 6

Language:

English

Subjects (All):

Electronics.

Gallium arsenide semiconductors.

Physical Description:

1 online resource (370 p.)

Place of Publication:

London : Institution of Electrical Engineers, c2005.

Language Note:

English

Summary:

This book provides fundamental and practical information on all aspects of GaAs processing. The book also gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography, and dry etching.

Contents:

CONTENTS; Acknowledgment; Abbreviations; 1. Introduction to GaAs devices; 2. Semiconductor properties, growth, characterisation and processing techniques; 3. Cleaning and passivation of GaAs and related alloys; 4. Wet etching and photolithography of GaAs and related alloys; 5. Dry etching of GaAs and related alloys; 6. Ohmic contacts; 7. Schottky contacts; 8. Field effect transistors; 9. Heterojunction bipolar transistors; 10. Wet oxidation for optoelectronic and MIS GaAs devices; Glossary; Index

Notes:

Description based upon print version of record.

Includes bibliographical references and index.

ISBN:

1-282-26334-X

9786612263347

1-61583-323-4

1-84919-068-2

OCLC:

460736339