Nanoscale MOS transistors : semi-classical transport and applications / David Esseni, Pierpaolo Palestri, Luca Selmi.

Format:

Book

Author/Creator:

Esseni, D. (David), author.

Palestri, P. (Pierpaolo), author.

Selmi, L. (Luca), author.

Language:

English

Subjects (All):

Metal oxide semiconductors--Design and construction.

Metal oxide semiconductors.

Electron transport.

Nanoelectronics.

Physical Description:

1 online resource (xvii, 470 pages) : digital, PDF file(s).

Place of Publication:

Cambridge : Cambridge University Press, 2011.

Language Note:

English

Summary:

Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results

Contents:

Machine generated contents note: 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential.

Notes:

Title from publisher's bibliographic system (viewed on 05 Oct 2015).

Includes bibliographical references and index.

ISBN:

1-107-21590-0

1-282-97823-3

9786612978234

0-511-93186-7

0-511-97385-3

0-511-92375-9

0-511-93322-3

0-511-92801-7

0-511-92548-4

0-511-93052-6

OCLC:

700697483