Thin film processes II / edited by John L. Vossen, Werner Kern.

Format:

Book

Contributor:

Vossen, John L.

Kern, Werner, 1925-

Series:

Thin film processes ; 2

Language:

English

Subjects (All):

Thin films.

Physical Description:

1 online resource (881 p.)

Other Title:

Thin film processes two.

Place of Publication:

Boston : Academic Press, Inc., c1991.

Language Note:

English

Summary:

This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

Contents:

Front Cover; Thin Film Processes II; Copyright Page; Table of Contents; List of Contributors; Preface; Part I; Chapter I-1. Introduction; I. The Organization of This Book; II. Other Film Deposition and Etching Processes; References; Part II; Chapter II-1. Glow Discharge Plasmas and Sources for Etching and Deposition; I. Introduction; II. Processing Plasmas; III. dc Diode Plasmas; IV. rf Diode Plasmas; V. Afterglow Plasmas; VI. Plasmas in the Presence of Magnetic Fields; VII. Magnetrons; VIII. Broad-Beam Ion Sources; IX. Measurements in Plasmas; X. Intrusive Diagnostics

XI. Nonintrusive DiagnosticsXII. Conclusion; References; Chapter II-2. Evaporation Processes; I. Introduction; II. Evaporation Process; III. Model of Film Growth in Evaporation Processes; IV. Theory and Mechanisms; V. Implementation of Evaporation Processes; VI. Deposition of Materials; VII. Materials Synthesized by Evaporation-Based Processes; VIII. Structure and Properties of Evaporated Films; IX. Conclusions; References; Chapter II-3. Molecular Beam Epitaxy; I. Introduction; II. Building Blocks of the MBE System; III. Basics of the Growth Process; IV. Trends and Future Development

AcknowledgmentsReferences; Chapter II-4. Sputter Deposition Processes; I. Introduction; II. Sputter Sources; III. Sputter Deposition of Conducting Films; IV. Sputter Deposition of Dielectric Films; V. Sputter Coating Systems; VI. Emerging Technologies; VII. Concluding Remarks; References; Chapter II-5. The Cathodic Arc Plasma Deposition of Thin Films; I. Introduction; II. Ion Plating; III. The Cathodic Arc; IV. Emitted Material; V. Cathodic Arc Deposition; VI. Thin Film Deposition; VII. Applications; VIII. Conclusion; References; Part III; Chapter III-1. Thermal Chemical Vapor Deposition

I. IntroductionII. Fundamentals of Thermal CVD; III. Production Reactor Systems; IV. CVD of Insulators and Dielectrics; V. CVD of Elemental and Compound Semiconductors; VI. CVD of Conductors; VII. Summary, Conclusions, and Future Outlook; References; Chapter III-2. OMVPE of Compound Semiconductors; I. Introduction; II. The OMVPE Technique and Growth System; III. Organometallic Compounds; IV. Gas-Phase and Surface Reaction Mechanisms; V. OMVPE Transport Phenomena and Modelling; VI. Materials Characterization and Development; VII. Fundamental Growth Issues; VIII. OMVPE Growth

IX. Impurities in OMVPE-Grown Compound SemiconductorsX. Summary; References; Chapter III-3. Photochemical Vapor Deposition; I. Introduction; I. Introduction; II. Fundamental Aspects of Photochemical Vapor Deposition; III. Reactors, Optical Sources, and Associated Equipment; IV. Metal Films; V. Semiconductors; VI. Dielectrics; VII. Conclusions; Acknowledgments; References; Chapter III-4. Sol-Gel Coatings; II. The Sol-Gel Process; III. Thin Film Formation; IV. Applications; V. SUMMARY; Acknowledgment; References; Part IV; Chapter IV-1. Plasma-Enhanced Chemical Vapor Deposition; I. Introduction

II. Summary of Plasma Fundamentals

Notes:

Description based upon print version of record.

Includes bibliographical references and index.

ISBN:

1-299-19290-4

0-08-052421-4

OCLC:

829460506