Rare earth and transition metal doping of semiconductor materials : synthesis, room magnetic properties and temperature spintronics / edited by V. Dierolf, I. T. Ferguson, J. M. Zavada ; contributors, H. Asahi [and thirty-three others].

Format:

Book

Contributor:

Dierolf, Volkmar, 1960- editor.

Ferguson, Ian T., editor.

Zavada, J. M., editor.

Asahi, Hideaki, 1946- contributor.

Series:

Woodhead Publishing series in electronic and optical materials ; 87.

Woodhead Publishing Series in Electronic and Optical Materials ; 87

Language:

English

Subjects (All):

Transition metal compounds.

Physical Description:

1 online resource (472 p.)

Edition:

1st ed.

Place of Publication:

Amsterdam, [Netherlands] : Woodhead Publishing, 2016.

Summary:

Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge.This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths.

Contents:

Front Cover; Related titles; Rare Earth and Transition Metal Doping of Semiconductor Materials; Copyright; Contents; List of contributors; Woodhead Publishing Series in Electronic and Optical Materials; One - Theory of magnetism in III-V semiconductors; 1 - Computational nanomaterials design for nanospintronics: room-temperature spintronics applications; 1.1 Introduction; 1.2 Disordered dilute magnetic semiconductors; 1.2.1 p-d exchange and double exchange mechanisms; 1.2.2 Reliable calculation of TC; 1.2.3 Toward high TC; 1.3 Spinodal nanodecomposition and high blocking temperature

1.3.1 Mixing energy1.3.2 Chemical pair interaction; 1.3.3 Simulation of the spinodal nanodecomposition: Dairiseki phase versus Konbu phase; 1.3.3.1 Dairiseki phase; 1.3.3.2 Konbu phase; 1.3.4 Superparamagnetic blocking phenomena; 1.4 Rare-earth impurities in gallium nitride; 1.4.1 High-efficiency light emission; 1.4.2 High-density doping; 1.4.3 Zener's p-f exchange interaction; 1.4.4 Circularly polarized luminescence; 1.4.5 Summary; 1.5 MgO-based high-TC nanospintronics; References

2 - Electronic structure of magnetic impurities and defects in semiconductors: a guide to the theoretical models2.1 Introduction; 2.2 Electronic structure of transition-metal and rare-earth elements in semiconductors; 2.2.1 Basic energy level scheme; 2.2.2 Multiplet splittings for f electrons and Hund's rules; 2.3 Computational methods dealing with strongly correlated electrons; 2.3.1 Failures of density functional theory; 2.3.2 Hubbard U correction: LDA+U and SIC; 2.3.3 Hybrid functionals; 2.3.4 The GW method; 2.3.5 Dynamic mean field theory; 2.3.6 Concluding remarks; 2.4 Magnetism

2.4.1 Magnetic moments, ferromagnetic and antiferromagnetic coupling2.4.1.1 Introductory remarks; 2.4.1.2 Mapping of total energy differences on a Heisenberg model; 2.4.1.3 Liechtenstein's linear response theory; 2.4.1.4 Disordered local moments theory; 2.4.2 Spatial fluctuations of magnetic moments; 2.4.3 Percolation theory; 2.4.4 Effects of different underlying electronic structure methods; 2.4.5 Calculating critical temperatures; 2.4.6 Spinodal decomposition; 2.4.7 d0 magnetism: role of defects in magnetism; 2.4.8 Model exchange mechanisms; 2.5 Case study: Gd in GaN

2.5.1 Introduction and experimental literature2.5.2 Models for explaining the magnetism; 2.5.2.1 Sphere of influence model; 2.5.2.2 s-f coupling model; 2.5.2.3 Ga vacancies; 2.5.2.4 Critique of the vacancy model; 2.5.2.5 Interstitials; 2.5.2.6 Analysis of exchange interactions; 2.5.2.7 Ga-vacancy clusters; 2.5.2.8 Results of percolation theory; 2.5.2.9 Fermi-level pinning near clusters; 2.5.3 Growth simulations of clustering; 2.5.3.1 Experimental evidence for clustering and role of extended defects; 2.5.3.2 Discussion; 2.5.4 Summary; Acknowledgments; References

3 - Energetics, atomic structure, and magnetics of rare earth-doped GaN bulk and nanoparticles

Notes:

Description based upon print version of record.

Includes bibliographical references at the end of each chapters and index.

Description based on online resource; title from PDF title page (ebrary, viewed February 12, 2016).

Description based on publisher supplied metadata and other sources.

ISBN:

9780081000601

008100060X

OCLC:

939262274