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Nano-scaled semiconductor devices : physics, modelling, characterisation, and social impact / edited by Edmundo A. Gutierrez-D.
- Format:
- Book
- Series:
- Materials, circuits and devices ; 27.
- Materials, Circuits and Devices Series ; 27
- Language:
- English
- Subjects (All):
- Semiconductors.
- Physical Description:
- 1 online resource (465 p.)
- Place of Publication:
- Stevenage, England : The Institution of Engineering and Technology, 2016.
- Summary:
- This book describes methods for the characterisation, modelling, and simulation prediction of these second order effects in order to optimise performance, energy efficiency and new uses of nano-scaled semiconductor devices.
- Contents:
- Contents; Synopsis; 1. Introduction; References; 2. Device physics, modeling, and technology for nano-scaled semiconductor devices; 2.1. Bulk MOSFETs and related device structures; 2.2. Advanced FET-related devices; 2.3. Different approaches for semiconductor device modeling and simulation; 2.4. Alternative materials and device structures; 2.5. Conclusions; Acknowledgments; References; 3. Advanced device characterization techniques; 3.1. Conventional electrical characterization and modeling techniques; 3.2. Reliability, degradation, lifetime prediction, and failure
- 3.3. Alternative approaches for device characterization including magnetic fields3.4. Conclusions; Acknowledgment; References; 4. The semiconductor device technology and its societal impact; 4.1. Introduction; 4.2. Energy-efficient electron devices and the sustainable and green environment; 4.3. Applications to safe and green environment; 4.4. Applications to human health and medicine; 4.5. Conclusions; References; 5. The silicon era and beyond; 5.1. Comments; 5.2. Conclusion; References; Index
- Notes:
- Description based upon print version of record.
- Includes bibliographical references at the end of each chapters and index.
- Description based on online resource; title from PDF title page (ebrary, viewed October 4, 2016).
- ISBN:
- 1-5231-0316-7
- 1-84919-931-0
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