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Stress-Induced Phenomena in Metallization: Third International Workshop: Palo Alto, CA, June 1995
- Format:
- Book
- Author/Creator:
- Ho, P. S., Author.
- Series:
- AIP conference proceedings ; 373.
- AIP conference proceedings ; 373
- Language:
- English
- Subjects (All):
- Metallic films--Congresses.
- Metallic films.
- Metallizing--Congresses.
- Metallizing.
- Semiconductors--Defects--Congresses.
- Semiconductors.
- Physical Description:
- 1 online resource (vii, 304 pages) : illustrations.
- Other Title:
- Third International Stress Workshop On Stress-Induced Phenomena In Metallization, Volume 373
- Place of Publication:
- [Place of publication not identified] A I P Press Imprint 1996
- Language Note:
- English
- Summary:
- A volume of conference proceedings covering recent work on stress induced phenomena in metallization.
- Contents:
- Stress characteristics and void formation in thin films and interconnects: Analysis of stresses in passivated metal lines / U. Burges [and others]
- Investigation of stresses in passivated gold lines / R. Pollak [and others]
- Plastic deformation and stress-induced voiding in Al-Cu interconnects / D. Jawarani [and others]
- Stress relaxation and microstructural change in passivated Al(Cu) lines during isothermal annealing / I.-S. Yeo [and others]
- Electrical measurement of stress-induced void growth / T.D. Sullivan, D.P. Bouldin, and D.H. Yao
- Stress generation in Al-Si-Cu metallization resulting from thermal cycling between -196[degrees]C and 250[degrees]C / F. Baldwin [and others]
- Stress concentration at W vias / J.R. Lloyd, J.B. Sauber, and J.A. Walls
- Modeling electromigration in multi-level interconnects / D. Chidambarrao and M.M. Pelella
- Electromigration and damage mechanisms in interconnects: Stress and alloying effects in electromigration / M.A. Korhonen [and others]
- Electromigration-induced voiding mechanisms in metallizations / O. Kraft, M. Bauer, and E. Arzt
- Initial void formation in bamboo Al-Cu(1%) two-level structure / P.-H. Wang [and others]
- Comparison of electromigration in submicron Al(Cu) and Cu thin film lines / C-K. Hu [and others]
- Effects of aluminum texture on electromigration lifetime / H. Toyoda [and others]
- The effect of test structure and stress condition on electromigration failure / H. Kawasaki [and others]
- Cu behaviors induced by aging and their effects on electromigration resistance on Al-Cu lines / T. Nogami and T. Nemoto
- In-situ side-view observation of electromigration in layered Al lines by ultrahigh voltage transmission electron microscopy / H. Okabayashi [and others]
- Line length effects on lifetime measurements and resistance saturation during electromigration testing / R.G. Filippi, G.A. Biery, and R.A. Wachnik
- Dependence of electromigration failure modes on EM-induced and thermally-induced mechanical stress in interconnect lines / S. Pramanick [and others]
- Resistance oscillations induced by DC electromigration / S. Shingubara [and others]
- Void, Si nodule and current observations by optical beam heating and current change measurement / K. Nikawa and S. Inoue
- Interface diffusion and electromigration failure in narrow aluminum lines with barrier layers / R.A. Augur, F. Van den Elshout, and R.A.M. Wolters
- Highly electromigration-resistive via structure using Al-reflow for multi-level interconnection / I.S. Park.
- Notes:
- Bibliographic Level Mode of Issuance: Monograph
- ISBN:
- 1-56396-439-2
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