MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen.

Format:

Book

Author/Creator:

Chen, Jr-Tai, author.

Contributor:

Semiconductor Materials Division. Department of Physics, Chemistry, and Biology. Linköping University, issuing body.

Series:

Linköping studies in science and technology. Dissertations ; Number 1662.

Linköping Studies in Science and Technology Dissertations, 0345-7524 ; Number 1662

Language:

English

Subjects (All):

Semiconductors--Materials.

Semiconductors.

Epitaxy.

Physical Description:

1 online resource (81 pages) : illustrations (some color).

Place of Publication:

Linköping, Sweden : Linköping University, 2015.

Language Note:

English

Notes:

Bibliographic Level Mode of Issuance: Monograph

Includes bibliographical references.

Description based on online resource; title from PDF title page (ebrary, viewed May 5, 2015).

ISBN:

91-7519-073-7

OCLC:

909902902