Chemistry in microelectronics / edited by Yannick Le Tiec.

Format:

Book

Contributor:

Le Tiec, Yannick.

Series:

ISTE

Electronics engineering series

Language:

English

Subjects (All):

Microelectronics.

Electronics--Materials.

Electronics.

Physical Description:

1 online resource (386 p.)

Edition:

1st ed.

Place of Publication:

London : ISTE, 2013.

Language Note:

English

Summary:

Microelectronics is a complex world where many sciences need to collaborate to create nano-objects: we need expertise in electronics, microelectronics, physics, optics and mechanics also crossing into chemistry, electrochemistry, as well as biology, biochemistry and medicine. Chemistry is involved in many fields from materials, chemicals, gases, liquids or salts, the basics of reactions and equilibrium, to the optimized cleaning of surfaces and selective etching of specific layers. In addition, over recent decades, the size of the transistors has been drastically reduced while the functiona

Contents:

Title Page; Cpntents; Preface; Chapter 1. Chemistry in the "Front End of the Line" (FEOL): Deposits, Gate Stacks, Epitaxy and Contacts; 1.1. Introduction; 1.2. Arrangement of the gate; 1.2.1. Generalities; 1.2.2. Silicon nitriding processes; 1.2.3. The introduction of the High K/metal gate stacks; 1.2.4. Conclusion; 1.3. Chemistry of crystalline materials; 1.3.1. Generalities; 1.3.2. A few basic ideas about epitaxy; 1.3.3. Surface preparation prior to epitaxy; 1.3.4. Low-temperature Si and SiGe growth: the comparison of three precursors (silane, disilane and dichlorosilane)

1.3.5. Integration and conclusion1.4. Contact areas between the gate and the "source" and "drain"; 1.4.1. Generalities; 1.4.2. Introduction to the conventional NiSi process for sub-90 nm nodes; 1.4.3. Implications for the SALICIDE process of the recent technology evolutions; 1.4.4. Conclusion; 1.5. General conclusion; 1.6. List of Abbreviations; 1.7. Bibliography; Chapter 2. Chemistry in Interconnects; 2.1. Introduction; 2.2. Interconnects: generalities and background; 2.2.1. What conditions are required for an interconnect?; 2.2.2. The main technological advancements; 2.2.3. Conclusion

2.3. Dielectric deposits2.3.1. Dielectric generalities; 2.3.2. Interline dielectrics; 2.3.3. Barrier dielectrics; 2.3.4. Conclusion; 2.4. Deposition and properties of metal layers for interconnect structures; 2.4.1. The manufacture of interconnect structures; 2.4.2. The chemistry of materials and functional properties; 2.4.3. The chemistry of interfaces; 2.4.4. The chemistry of metal deposition processes; 2.4.5. Conclusion; 2.5. Cleaning process for copper interconnects; 2.5.1. Introduction; 2.5.2. Impact of corrosion in microelectronics; 2.5.3. Electrochemical diagnostic tools

2.5.4. Equipment for cleaning copper interconnections2.6. General conclusions and perspectives; 2.7. List of Abbreviations; 2.8. Bibliography; Chapter 3. The Chemistry of Wet Surface Preparation: Cleaning, Etching and Drying; 3.1. Introduction; 3.2. Cleaning; 3.2.1. Ammonium hydrogen peroxide mixture (APM); 3.2.2. Hydrochloric acid hydrogen peroxide mixture (HPM); 3.2.3. Sulfuric acid hydrogen peroxide mixture (SPM); 3.3. Wet etching; 3.3.1. Hydrofluoric acid (HF); 3.3.2. Buffered oxide etchant or BOE (HF/NH4F); 3.4. Rinsing and drying; 3.4.1. Ultrapure water (UPW); 3.4.2. Drying

3.5. Conclusion3.6. List of Abbreviations; 3.7. Bibliography; Chapter 4. The Use and Management of Chemical Fluids in Microelectronics; 4.1. Ultrapure water; 4.1.1. Parameters of UPW; 4.1.2. UPW system unit operations; 4.1.3. Fundamentals; 4.1.4. Future trends; 4.2. Gases for semiconductors; 4.2.1. Main gases used in the semiconductor fabrication process; 4.2.2. Gas quality requirements for semiconductor fabrication; 4.2.3. Implementation of gases used in the manufacturing of semiconductors; 4.2.4. Conclusion; 4.3. Dissolved gases; 4.3.1. DI-O3; 4.3.2. DI-CO2; 4.3.3. DO

4.4. High-purity chemicals

Notes:

Description based upon print version of record.

Includes bibliographical references and index.

ISBN:

9781118578124

1118578120

9781118578070

1118578074

9781299277304

1299277306

9781118580141

1118580141

OCLC:

830163371