HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France / edited by Daniel Alquier.

Format:

Book

Conference/Event

Author/Creator:

Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, Corporate Author.

Contributor:

Alquier, Daniel.

Conference Name:

Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (4th : 2011 : Tours, France)

Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications

Series:

Materials science forum ; v. 771.

Materials Science Forum, 1662-9809 ; Volume 711

Language:

English

Subjects (All):

Semiconductors--Materials--Congresses.

Semiconductors.

Power electronics--Congresses.

Power electronics.

Materials science--Congresses.

Materials science.

Physical Description:

1 online resource (269 p.)

Edition:

1st ed.

Place of Publication:

Zurich, Switzerland : Trans Tech Publications, 2012.

Language Note:

English

Summary:

The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings present the latest developments in Silicon Carbide, and the prospects for Gallium Nitride (GaN on Si, SiC, sapphire and free-standing) and Diamond power electronics. Finally, the progress made in Graphene technology, such as its introduction into devices and its relationship to SiC epitaxial material, i

Contents:

HeteroSiC & WASMPE 2011; Preface, Sponsors and Committees; Table of Contents; Chapter 1: SiC Heteroepitaxial Growth; Progress in 3C-SiC Growth and Novel Applications; Elimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate; CVD Growth of 3C-SiC on 4H-SiC Substrate; The Influence of C3H8 and CBr4 on Structural and Morphological Properties of 3C-SiC Layers; Structural Characterization of Heteroepitaxial 3C-SiC; Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates

Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding LayerChapter 2: Microsystems and Microstructures Based on SiC; Study of 3C-SiC Mechanical Resonators, Filters and Mixers; Mechanical Proprieties and Residual Stress Evaluation on Heteroepitaxial 3C-SiC/Si for MEMS Application; Strain Field Analysis of 3C-SiC Free-Standing Microstructures by Micro-Raman and Theoretical Modelling; Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition

Fabrication of SiC Nanopillars by Inductively Coupled SF6/O2 PlasmaMaterial Limitations for the Development of High Performance SiC NWFETs; Selective β-SiC/SiO2 Core-Shell NW Growth on Patterned Silicon Substrate; High Frequency 3C-SiC AFM Cantilever Using Thermal Actuation and Metallic Piezoresistive Detection; Detailed Experimental Study of Mean and Gradient Stresses in Thin 3C-SiC Films Performed Using Micromachined Cantilevers; Chapter 3: Devices on SiC; High Quality 3C-SiC Substrate for MOSFET Fabrication; Characterization of Band Diagrams of Different Metal-SiO2-SiC(3C) Structures

Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETsThe Influence of Gate Material, SiO2 Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors; Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour; Visible and Deep Ultraviolet Study of SiC/SiO2 Interface; High Temperature Capability of High Voltage 4H-SiC JBS; Parallel and Serial Association of SiC Light Triggered Thyristors

Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETsChapter 4: Characterization: Devices and Material; Structural Characterization of Graphene Grown by Thermal Decomposition of Off-Axis 4H-SiC (0001); Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy; Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si; On Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and Heterostructures

Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications

Notes:

Description based upon print version of record.

Includes bibliographical references at the end of each chapters and indexes.

Description based on print version record.

ISBN:

3-03813-671-9

OCLC:

897640848