Technology evolution for silicon nano-electronics [electronic resource] : selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan / edited by Seiichi Miyazaki and Hitoshi Tabata.

Format:

Book

Conference/Event

Author/Creator:

International Symposium on Technology Evolution for Silicon Nano-Electronics, Corporate Author.

Contributor:

Miyazaki, Seiichi.

Tabata, Hitoshi.

Conference Name:

International Symposium on Technology Evolution for Silicon Nano-Electronics (2010 : Tokyo Institute of Technology)

Series:

Key Engineering Materials

Key engineering materials, 1013-9826 ; v. 470

Language:

English

Subjects (All):

Nanoelectronics--Congresses.

Nanoelectronics.

Nanostructured materials--Congresses.

Nanostructured materials.

Metal oxide semiconductors--Congresses.

Metal oxide semiconductors.

Physical Description:

1 online resource (245 p.)

Edition:

1st ed.

Place of Publication:

Stafa-Zurich, Switzerland ; Enfield, N.H. : Trans Tech Publications, c2011.

Language Note:

English

Summary:

Silicon ultra-large scale integrated circuits (ULSIs) are now faced with various physical limits to further scaling. Therefore, it is very important to establish the fundamental science and technology required to produce nano-scale complementary metal-oxide-semiconductor devices (Nano-CMOS) having high performance, new functionalities and larger-scale integration. The scope of this book covers: - Nano-scale complementary metal-oxide-semiconductor devices (Nano-CMOS), - Novel functional devices, materials, and nanoprocessing technologies, - Nano-bio physics and technologies for future nano devi

Contents:

High Mobility Ge-Based CMOS Device Technologies

SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator

Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices

Functional Device Applications of Nanosilicon

Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs

KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel

Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures

Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact

Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure

Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions

First-Principles Calculations of the Dielectric Constant for the GeO2 Films

Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory

Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors

Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator

Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering

Resistive Memory Utilizing Ferritin Protein with Nano Particle

Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation

Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction

Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface

Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process

Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation

Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction

Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures

Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application

Strained Ge and Ge1-xSnx Technology for Future CMOS Devices

Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100)

Structural Change during the Formation of Directly Bonded Silicon Substrates

Microscopic Structure of Directly Bonded Silicon Substrates

Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains

Si Nanodot Device Fabricated by Thermal Oxidation and their Applications

Influences of Carrier Transport on Drain-Current Variability of MOSFETs

Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers

Analysis of Threshold Voltage Variations in Fin Field Effect Transistors

Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs

Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction

Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs

Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors

Interconnect Design Challenges in Nano CMOS Circuit.

Notes:

Description based upon print version of record.

Includes bibliographical references and indexes.

ISBN:

1-62870-516-7

3-03813-494-5

OCLC:

769461004