Frontiers in electronics : proceedings of the WOFE-04, Wyndham Aruba Beach Resort, 17-23 December 2004 / edited by H. Iwai ... [et al.].

Format:

Book

Conference/Event

Author/Creator:

Workshop on Frontiers in Electronics, Corporate Author.

Contributor:

Iwai, H.

Conference Name:

Workshop on Frontiers in Electronics (2004 : Aruba)

Workshop on Frontiers in Electronics.

Series:

Selected topics in electronics and systems ; v. 41.

Selected topics in electronics and systems ; v. 41

Language:

English

Subjects (All):

Electronics--Technological innovations--Congresses.

Electronics.

Electrical engineering.

Physical Description:

1 online resource (774 p.)

Edition:

1st ed.

Place of Publication:

New Jersey : World Scientific, 2006.

Language Note:

English

Summary:

<i>Frontiers in Electronics</i> reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues. This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies. <i>S

Contents:

CONTENTS; Preface; Photographs at WOFE 2004; I. Frontiers in Electronics: Technology Trends and Future Concepts; Are we at the End of CMOS Scaling?; 3D Size Effects in Advanced SOI Devices; Frontiers of Nano-Bio System; Challenges For Future Semiconductor Manufacturing; Nanoelectronics - Opportunities and Challenges; Asymmetric Tunneling Source MOSFETS: A Novel Device Solution for Sub-100nm CMOS Technology; II. CMOS Technology: Nanoscale Physics New Materials and Structures; Analysis of the Effects of Strain in Ultra-Thin SOI MOS Devices

Device Simulation Demands of Upcoming Microelectronics DevicesSON (Silicon On Nothing) Platform for ULSI Era: Technology & Devices; Highly Scaled CMOS Device Technologies with New Structures and New Materials; Performance Limitations of Si CMOS and Alternatives for Nanoelectronics; CMOS Devices Architectures and Technology Innovations for the Nanoelectronics Era; Novel Dielectric Materials for Future Transistor Generations; Part I: Bond Strain and Defects at Si-SiO2 and Dielectric Interfaces in High-k Gate Stacks

Part II: Conduction Band-Edge States Associated with Removal of d-State Degeneracies by the Static Jahn-Teller EffectAdvanced Cooling Technologies For Microprocessors; A New Approach to Characterize and Predict Lifetime of Deep-Submicron NMOS Devices; Undoped Body Symmetric Double Gate MOSFET Modeling; III. CMOS Technology: Device and Process Characterization; Study of the Gate Insulator/Silicon Interface Utilizing Soft and Hard X-Ray Photoelectron Spectroscopy at SPring-8; Deformable Electronic Surfaces; Current Issues and Future Prospects of Lithography

A Theoretical Study of Point Defects in Zirconia-Silicon InterfacesElastomeric Interconnects; IV. Nanowire/Nanotube and Quantum Device; On the Possibility of an Intersubband Laser in Silicon-on-Insulator; Toward Ultra-Low Power III-V Quantum Large Scale Integrated Circuits for Ubiquitous Network Era; Ballistic Electron Acceleration Negative-Differential-Conductivity Devices; Current Instability and Plasma Wave Generation in Ungated Two Dimensional Electron Layers; V. Spintronics and Emerging High-Speed Devices; High-Power Switching Using III-Nitride Metal-Oxide-Semiconductor Heterostructures

Recent Progress on GaN-Based Electron DevicesAdvancements in Nanoelectronic SONOS Nonvolatile Semiconductor Memory (NVSM) Devices and Technology; A Quantum Dot Microcavity Terahertz Laser; The Growth and Characterization of Room Temperature Ferromagnetic Wideband-Gap Materials For Spintronic Applications; Enhancing Power Electronic Devices with Wide Bandgap Semiconductors; VI. Optoelectronics; Feasibility of an Optical Frequency Modulation System for Free-Space Optical Communications

Recent Development of Sb-Based Phototransistors in the 0.9- to 2.2-um Wavelength Range For Applications to Laser Remote Sensing

Notes:

Description based upon print version of record.

Includes bibliographical references and index.

ISBN:

9786611373306

9781281373304

1281373303

9789812773081

9812773088

OCLC:

879074221