SiC materials and devices / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein.

Format:

Book

Contributor:

Shur, Michael.

Rumyantsev, Sergey.

Levinshteĭn, M. E. (Mikhail Efimovich)

Series:

Selected topics in electronics and systems ; v. 40.

Selected topics in electronics and systems ; 43

SiC materials and devices ; 2

Language:

English

Subjects (All):

Silicon carbide--Electric properties.

Silicon carbide.

Semiconductors.

Physical Description:

1 online resource (143 p.)

Edition:

1st ed.

Place of Publication:

New Jersey ; London : World Scientific, 2007.

Language Note:

English

Summary:

Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization. This second of two volumes reviews four important additional areas: the growth

Contents:

Preface; CONTENTS; Growth of Sic Substrates A. Powell, J. Jenny, S. Muller, H. Mcd. Hobgood, V. Tsvetkov, R. Lenoard and C. Carter, Jr.; 1. Introduction; 2. Sic Bulk Growth; 3. Crystal Orientation; 4. Crystal Diameter Enlargement; 5. Substrate Defects; 6. Doping in SIC; 7. Sic Substrates for Microwave Devices; 8. Wafering and Polish; 9. Substrate Cost; 10. Conclusions; Acknowledgments; References; Deep Level Defects in Silicon Carbide A. A. Lebedev; 1. Introduction; 2. Parameters of Deep Centers in Sic; 3. Influence of Impurities on the Growth of Epitaxial Sic Layers

4. Deep Centers and Recombination Processes in Sic5. Conclusion; Acknowledgements; References; Silicon Carbide Junction Field Effect Transistors D. Stephani and P. Friedrichs; 1. Introduction; 2. Lateral SiC-JFETs; 3. The Vertical JFET (VJFET); References; Sic BJTs T. P. Chow and A. K. Agarwal; 1. Introduction; 2, Figures of Merit; 3. Power Bipolar Transistors; 4. Commercialization Challenges; References

Notes:

Description based upon print version of record.

Includes bibliographical references.

Contains:

Journal of high speed electronics & systems.

ISBN:

9786611121242

9781281121240

128112124X

9789812706850

9812706852

OCLC:

476099323