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MOSFET modeling for circuit analysis and design / Carlos Galup-Montoro, Marcio Cherem Schneider.
- Format:
- Book
- Author/Creator:
- Galup-Montoro, Carlos.
- Series:
- International series on advances in solid state electronics and technology.
- International series on advances in solid state electronics and technology
- Language:
- English
- Subjects (All):
- Metal oxide semiconductor field-effect transistors--Mathematical models.
- Metal oxide semiconductor field-effect transistors.
- Field-effect transistors--Mathematical models.
- Field-effect transistors.
- Physical Description:
- 1 online resource (445 p.)
- Edition:
- 1st ed.
- Place of Publication:
- Singapore ; Hackensack, NJ : World Scientific, c2007.
- Language Note:
- English
- Summary:
- This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex
- Contents:
- Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension
- Appendix B Electrostatics in SemiconductorsAppendix C Drift-diffusion Current Model; Appendix D Continuity Equations; Appendix E Basics of pn Junctions; Appendix F Hall-Shockley-Read (HSR) Statistics; Appendix G Interface Trap Capacitance; Index
- Notes:
- Description based upon print version of record.
- Includes bibliographical references and index.
- ISBN:
- 9786611120870
- 9781281120878
- 1281120871
- 9789812707598
- 981270759X
- OCLC:
- 476099450
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