Wide band gap semiconductor nanowires 2 : heterostructures and optoelectronic devices / edited by Vincent Consonni, Guy Feuillet.

Format:

Book

Contributor:

Consonni, Vincent, editor.

Feuillet, Guy, editor.

Series:

Electronics engineering series (London, England)

Electronics Engineering Series

Language:

English

Subjects (All):

Nanowires.

Optoelectronic devices.

Physical Description:

1 online resource (272 p.)

Edition:

1st ed.

Place of Publication:

London, [England] ; Hoboken, New Jersey : ISTE : Wiley, 2014.

Language Note:

English

Summary:

This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LED's, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN,

Contents:

Cover; Title Page; Copyright; Contents; Preface; Part 1: GaN and ZnO Nanowire Heterostructures; Chapter 1: AlGaN/GaN Nanowire Heterostructures ; 1.1. A model system for AlGaN/GaN heterostructures; 1.2. Axial AlGaN/GaN nanowire heterostructures; 1.2.1. Structural properties of axial AlGaN/GaN nanowire heterostructures; 1.2.2. Optical properties of axial AlGaN/GaN nanowire heterostructures; 1.2.3. Lateral internal electric fields; 1.2.4. Axial internal electric fields; 1.2.5. Optical characterization of single-AlGaN/GaN nanowires containing GaN nanodisks; 1.2.6. Electrical transport properties

1.3. AlGaN/GaN core-shell nanowire heterostructures 1.3.1. Structural properties; 1.3.2. Optical characteristics; 1.3.3. Electronic properties; 1.3.4. True one-dimensional GaN quantum wire (QWR) second-order self-assembly; 1.4. Application examples; 1.4.1. AlGaN/GaN NWH optochemical gas sensors; 1.4.2. AlGaN/GaN nanowire heterostructure resonant tunneling diodes; 1.5. Conclusions; 1.6. Bibliography; Chapter 2: InGaN Nanowire Heterostructures; 2.1. Introduction; 2.2. Self-assembled InGaN nanowires; 2.3. X-ray characterization of InGaN nanowires

2.4. InGaN nanodisks and nanoislands in GaN nanowires2.5. Selective area growth (SAG) of InGaN nanowires; 2.6. Conclusion; 2.7. Bibliography; Chapter 3: ZnO-Based Nanowire Heterostructures; 3.1. Introduction; 3.2. Designing ZnO-based nanowire heterostructures; 3.3. Growth of ZnxMg1-xO/ZnO core-shell heterostructures by MOVPE; 3.4. Misfit relaxation processes in ZnxMg1-xO/ZnO core-shell structures; 3.5. Optical efficiency of core-shell oxide-based nanowire heterostructures; 3.6. Axial nanowire heterostructures; 3.7. Conclusions and perspectives; 3.8. Bibliography

Chapter 4: ZnO and GaN Nanowire-based Type II Heterostructures 4.1. Semiconductor heterostructures; 4.2. Type II heterostructures; 4.3. Optimal device architecture; 4.4. Electronic structure of type II core-shell nanowires; 4.5. Synthesis of the type II core-shell nanowires and their signatures; 4.6. Demonstration of type II effects in ZnO-ZnSe core-shell nanowires and photovoltaic devices; 4.7. Summary; 4.8. Acknowledgments; 4.9. Bibliography; Part 2: Integration of GaN and ZnO Nanowires in Optoelectronic Devices; Chapter 5: Axial GaN Nanowire-based LEDs; 5.1. Introduction

5.2. Top-down GaN-based axial nanowire LEDs 5.2.1. Fabrication of top-down GaN-based axial nanowires; 5.2.2. Device fabrication of axial nanowire LEDs; 5.2.3. Performance characteristics of top-down axial nanowire LEDs; 5.3. Bottom-up GaN-based axial nanowire LEDs; 5.3.1. Growth techniques; 5.3.2. Doping, polarity and surface charge properties; 5.3.3. Design and typical performance of bottom-up axial nanowire LEDs; 5.3.3.1. Disk/well-in-a-wire LEDs; 5.3.3.2. Double heterostructure nanowire LEDs; 5.3.3.3. Dot-in-a-wire nanowire LEDs; 5.3.3.4. Polarization-induced p-n junction nanowire LEDs

5.3.3.5. Tunable nanowire LEDs by selective area growth

Notes:

Description based upon print version of record.

Includes bibliographical references at the end of each chapters.

Description based on online resource; title from PDF title page (ebrary, viewed August 22, 2014).

ISBN:

9781118984284

1118984285

9781118984291

1118984293

9781118984277

1118984277

OCLC:

887507338