Quantum dots : research, technology and applications / Randolf W. Knoss, editor.

Format:

Book

Contributor:

Knoss, Randolf W.

Language:

English

Subjects (All):

Quantum dots.

Semiconductors.

Physical Description:

1 online resource (709 p.)

Edition:

1st ed.

Place of Publication:

New York : Nova Science Publishers, c2008.

Language Note:

English

Summary:

Since first developed in the early sixties, silicon chip technology has made vast leaps forward. From a rudimentary circuit with a mere handful of transistors, the chip has evolved into a technological wonder, packing millions of bits of information on a surface no larger that a human thumbnail. And most experts predict that in the near future, we will see chips with over a billion bits. Quantum dots are small devices that contain a tiny droplet of free electrons. They are fabricated in semiconductor materials and have typical dimensions ranging from nanometres to a few microns.The size and shape of these structures and therefore the number of electrons they contain can be precisely controlled; a quantum dot can have anything from a single electron to a collection of several thousands. The physics of quantum dots shows many parallels with the behaviour of naturally occurring quantum systems in atomic and nuclear physics. As in an atom, the energy levels in a quantum dot become quantised due to the confinement of electrons. Unlike atoms however, quantum dots can be easily connected to electrodes and are therefore excellent tools for studying atomic-like properties.

Contents:

Intro

QUANTUM DOTS: RESEARCH,TECHNOLOGY AND APPLICATIONS

NOTICE TO THE READER

CONTENTS

PREFACE

FEW-ELECTRON SEMICONDUCTOR QUANTUMDOTS IN MAGNETIC FIELD:THEORY AND METHODS

Abstract

1. Introduction

2. 2D Semiconductor Quantum Dots

3. Parabolic Confinement Potential

4. Other Confinement Potentials

5. Theory

6. General Methods

7. Quantum Monte Carlo methods

7.1. Variational Monte Carlo Method

7.2. Diffusion Monte Carlo Method

8. The Simplest 2D Semiconductor Quantum Dot (N=2)

8.1. Exact Numerical Diagonalization

8.2. Variational Theory

9. Quantum Hall Limit

10. Generalized Description of Few-Electron SemiconductorQuantum Dots in an Arbitrary Perpendicular MagneticField

11. Conclusion

References

INVESTIGATIONS OF ELECTRONIC STATESIN SELF-ASSEMBLED INAS/GAASQUANTUM-DOT STRUCTURES

2. Space-Charge Techniques

2.1. Capacitance-Voltage Spectroscopy

2.2. Deep-Level Transient Spectroscopy

2.3. Laplace-Transform Deep-Level Transient Spectroscopy

3. Coexistence of Deep Levels with Optically Active QuantumDots

3.1. Characterization of Electronic Structure by CV Spectroscopy

3.2. DLTS Characterization of Electronic Structure in Quantum-DotStructures

3.3. Fine Structures of the Deep Levels Probed with LDLTS

4. Effects of Rapid Thermal Annealing on QD Structures

4.1. Postgrowth Rapid Thermal Annealing

4.2. Effects of Annealing on PL Spectra

4.3. Effects of Annealing on DLTS Spectra

5. Electron Emissions from QD Intrinsic States

5.1. Preliminary Investigation of Carrier Emission from the Electronic Statesof Self-assembled InAs QDs by LDLTS

5.2. Electron Emission from QD Intrinsic States

6. Conclusion

References.

CHEMICALLY DEPOSITED THIN FILMS OF CLOSEPACKED CADMIUM SELENIDE QUANTUM DOTS:PHOTOPHYSICS, OPTICAL AND ELECTRICALPROPERTIES

2. The Chemical Synthetic Route to Nanostructured CdSe in ThinFilm Form

3. Structural Characterization of Close Packed CdSe QDs in ThinFilm Form

3.1. Identification and Estimation of the Average Crystal Size of theNanostructured CdSe Thin Films

4. Electronic Transitions and Optical Properties of theSynthesized Thin Films Composed by 3D Arrays of CdSeQuantum Dots

4.1. Band Structure Considerations for Macrocrystalline Cubic CdSe

4.2. The Influence of Size Quantization. A Simple Picture

4.3. Experimental Electronic Spectra of Nanostructured CdSe Thin Films.The Fundamental "Band-to-Band" Electronic Transitions

4.4. Size Evolution of the Fundamental "Interband" Electronic Transitions:Analysis of the Three-Dimensional Charge Carrier ConfinementEffects (Quantum Size Effects)

4.5. A Simple Explanation of Electronic Transitions Accounting for the Spin-Orbit Splitting of the Valence Band

4.6. The More Profound Physical Picture of Electronic Transitions,Accounting for the Hole Energy Levels Mixing

5. Charge-Carrier Transport Properties in Close Packed CdSeQuantum Dots Deposited as Thin Films Under EquilibriumConditions

5.1. Electrical Contact with the Nanostructured CdSe QD Thin Films

5.2. Determination of Type of Electrical Conductivity in Thin FilmsComposed of Close Packed Cadmium Selenide QDs

5.3. Temperature Dependence of the Equilibrium Conductivity of theNanostructured CdSe QD Thin Films

6. Photophysical Properties and Relaxation Dynamics inPhotoexcited CdSe Quantum Dots in Thin Film Form

6.1. The Spectral Dependence of Stationary Photoconductivity inNanostructured CdSe QD Thin Films.

6.2. Relaxation Dynamics of Non-equilibrium Charge Carriers inPhotoexcited CdSe Quantum Dots Deposited in Thin Film Form

6.3. Lux-Ampere Characteristics of the Photoconductive Thin Films.

NUMERICAL MODELLING OF SEMICONDUCTORQUANTUM DOT LIGHT EMITTERS FOR FIBEROPTIC COMMUNICATION AND SENSING

2. Numerical Model

2.1. Description and Definitions

2.2. Multi-population Rate Equations for QD Lasers

2.3. Multi-population Rate Equations for QD SLDs

3. Numerical Results: QD Lasers

3.1. Static Characteristics of QD Lasers

3.2. Small Signal Analysis

3.3. Large Signal Analysis

4. Numerical Results: QD SLD

5. Limitations of the Model

Acknowledgements

QUANTUM DOT TECHNOLOGY FORSEMICONDUCTOR BROADBAND LIGHT SOURCES

1.1. Applications of Broadband Light Sources

1.2. Types of Broadband Light Sources

1.3. Quantum dots (QDs) vs. Higher Dimensional Systems

2. Methods to Increase the Spectral Bandwidth

2.1. Utilization of Ground and Excited QD Transitions

2.2. Quantum Dot (QD) Intermixing

2.3. Bandgap Engineering

2.4. Active Layer Optimization

3. Theoretical Calculation

3.1. Analytical Derivation - QD with Infinite Potential Barriers

3.2. Numerical Formulation - QD with Finite Potential Barriers

3.3. Results and Discussion

4. Optimization for High Quantum Dot Areal Density andWideband Emission

4.1. Experimental Details

4.2. Effect of Growth Conditions on QD Surface Morphology and OpticalProperties

4.3. Origins of High Radiative Efficiency and Wideband Emission

5. Potential Challenges

6. Conclusions

QUANTUM DOTS IN MEDICINAL CHEMISTRYAND DRUG DEVELOPMENT

Introduction

An Introduction to Quantum Dots.

Quantum Dot Surface Chemistry

Bioactivation of Quantum Dots

Antibody Conjugated Quantum Dots

1. Quantum Dot Based Fluorescent Assays

2. Quantum Dot-Antibody Based Live Cell Assays

Peptide Conjugated Quantum Dots

Small Molecule Conjugated Quantum Dots

Future Applications of Quantum Dots in Drug Development andMedicinal Chemistry

Conclusion

STRAIN RELIEF AND NUCLEATION MECHANISMSOF INN QUANTUM DOTS

I. Introduction

II. Experimental

III. Morphological Characterization

IV. Nucleation

V. Determination of the Degree of Plastic Relaxation

III.1. Determination by Moiré Fringes

III.2. Determination of the Density of Misfit Dislocations by High ResolutionTEM

VI. Characterization of the Misfit Dislocations Network

VII. Effect of the Growth of the GaN Capping Layer

VII.1. Effect on the Morphology

VII.2. Effect on the Strain State

VIII. Conclusion

ELECTRONIC STRUCTURE AND PHYSICALPROPERTIES OF SEMICONDUCTOR QUANTUM DOTS

II. Effective-Mass Envelope Function Model

2.1. Hole Effective-Mass Hamiltonian

2.2. Effective-Mass Theory in the Spherical Coordinate [27,28]

2.3. Effective-Mass Theory of Quantum Ellipsoids (Rods) [30]

2.5. Effective-Mass Theory of Narrow Gap Semiconductor Quantum Dots[31]

2.5. Effective-Mass Theory of Quantum Rods in the Electric Field [33,34]

2.6. Effective-Mass Theory of Quantum Dots in Magnetic Field [35]

III. Polarization Properties of Emission

IV. g Factors of Quantum Dots

4.1. g Factors of CdSe [37] and InSb [38] Quantum Dots

4.2. Electric Field Tunable Electron g Factor and Highly Anisotropic StarkEffect

V. Giant Zeeman Splitting in DMS Quantum Dots

5.1. Giant Zeeman Splitting in ZnMnSe Quantum Spheres [40].

5.2. Anisotropic Giant Zeeman Splitting in InMnAs Quantum Dots [42]

5.3. Giant and Size-Sensitive g Factor in HgMnTe Quantum Spheres [43]

VI. Curie Temperature of DMS Quantum Dots

6.1. Curie Temperature of ZnO Quantum Dots [46]

6.2. Anisotropic Curie Temperature of InMnAs Quantum Dots [49]

VII. Summary

Acknowledgments

Appendix

GE NANOCLUSTERS IN GEO2 FILMS:SYNTHESIS, STRUCTURAL RESEARCHAND OPTICAL PROPERTIES

Experimental

Results and Discussion

1. Quantum Size Effects in Ge:GeO2 Films Visible by the Naked Eye

2. Transmittance Spectroscopy, Raman and Photoluminescence Studies

3. Thin (2D) Massifs of Ge NCs - HREM Studies

4. Elliposmetry Studies of Ge:GeO2 Films

5. Studies of Annealed Ge:GeO2 Films

6. Some Aspects of "Band Gap Engineering" of Ge:GeO2 Based Films and ItsPossible Applications

Summary

MODEL FOR THE COHERENT OPTICALMANIPULATION OF A SINGLE SPIN STATEIN A CHARGED QUANTUM DOT

2. Dynamical Model

2.1. Theoretical Background

2.2. FDTD Numerical Implementation

3. Conclusion

SUB-DIFFRACTION QUANTUM DOT WAVEGUIDES

Quantum Dot Waveguide Model

Quantum Dot Gain Model

Inter-Dot Coupling

Waveguide Transmission

Fabrication Methods

DNA-Mediated Assembly Technique

Two-Layer Assembly Technique

Experimental Results

Loss and Crosstalk Measurements

THREE-DIMENSIONAL IMAGINGS OF THEINTRACELLULAR LOCALIZATION OF MRNA AND ITSTRANSCRIPT USING NANOCRYSTAL (QUANTUMDOT) AND CONFOCAL LASER SCANNINGMICROSCOPY TECHNIQUES

Materials and Methods

Tissue Preparation

Biotinylation of Synthesized Oligonucleotide Probes for ISH.

Combined ISH and IHC Using HRP-DAB for the Detection of mRNA andQdot for the Detection of Protein.

Notes:

Bibliographic Level Mode of Issuance: Monograph

Includes bibliographical references and index.

ISBN:

1-60741-932-7

OCLC:

844329203