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High-k gate dielectrics for CMOS technology / edited by Gang He and Zhaoqi Sun.
- Format:
- Book
- Language:
- English
- Subjects (All):
- Dielectrics.
- Metal oxide semiconductors, Complementary.
- Physical Description:
- 1 online resource (592 p.)
- Edition:
- 1st ed.
- Place of Publication:
- Weinheim : Wiley-VCH, 2012.
- Language Note:
- English
- Summary:
- A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting dev
- Contents:
- pt. 1. Scaling and challenging of Si-based CMOS
- pt. 2. High-k deposition and materials characterization
- pt. 3. Challenge in interface engineering and electrode
- pt. 4. Development in non-Si-based CMOS technology
- pt. 5. High-k Application in novel devices
- pt. 6. Challenge and directions.
- Notes:
- Description based upon print version of record.
- Includes bibliographical references and index.
- ISBN:
- 9786613722744
- 9783527646364
- 3527646361
- 9781280881435
- 1280881437
- 9783527646340
- 3527646345
- 9783527646371
- 352764637X
- OCLC:
- 798536325
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