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An assessment of the National Institute of Standards and Technology Center for Nanoscale Science and Technology : fiscal year 2011 / National Research Council of the National Academies.

EBSCOhost Academic eBook Collection (North America) Available online

EBSCOhost Academic eBook Collection (North America)

Ebook Central Academic Complete Available online

Ebook Central Academic Complete

National Academies Press Available online

National Academies Press
Format:
Book
Contributor:
National Research Council (U.S.). Panel on Nanoscale Science and Technology.
National Research Council (U.S.). Laboratory Assessments Board.
National Research Council (U.S.). Division on Engineering and Physical Sciences.
Language:
English
Subjects (All):
Center for Nanoscale Science and Technology (National Institute of Standards and Technology)--Evaluation.
Nanotechnology--Research--United States.
Nanoscience--Research--United States.
Physical Description:
1 online resource (30 p.)
Edition:
1st ed.
Place of Publication:
Washington, D.C. : National Academies Press, 2011.
Language Note:
English
Summary:
Since 1959, the National Research Council (NRC), at the request of the National Institute of Standards and Technology (NIST), has annually assembled panels of experts to assess the quality and effectiveness of the NIST measurements and standards laboratories. In 2011, the NRC evaluated three of the six NIST laboratories: the Center for Nanoscale Science and Technology (CNST), the NIST Center for Neutron Research (NCNR) and the Information Technology Laboratory (ITL). Each of these was addressed individually by a separate panel of experts; this report assesses CNST.
Contents:
""Front matter""; ""Acknowledgment of Reviewers""; ""Contents""; ""Summary""; ""1 The Charge to the Panel and the Assessment Process""; ""2 Overall Assessment""; ""3 The Research Program""; ""4 The NanoFab Program""; ""5 Overall Conclusions""
Notes:
"Panel on Nanoscale Science and Technology, Laboratory Assessments Board, Division on Engineering and Physical Sciences."
Includes bibliographical references.
ISBN:
0-309-22010-6
1-283-37642-3
9786613376428
0-309-22008-4
OCLC:
923284871

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