Science and technology of chemiresistor gas sensors / Dinesh K. Aswal and Shiv K. Gupta, editors.

Format:

Book

Contributor:

Aswal, Dinesh K.

Gupta, Shiv K., 1930-

Language:

English

Subjects (All):

Gas detectors.

Nanotechnology.

Physical Description:

1 online resource (392 p.)

Edition:

1st ed.

Place of Publication:

New York : Nova Science Publishers, Inc., 2007.

Language Note:

English

Summary:

It is needed to develop gas sensors having very small size with very low power consumption. In order to achieve this goal, it is essential that various aspects of gas sensors are seriously considered. This book examines these issues pertaining to chemiresistive gas sensors.

Contents:

Intro

SCIENCE AND TECHNOLOGY OF CHEMIRESISTOR GAS SENSORS

LIBRARY OF CONGRESS CATALOGING-IN-PUBLICATION DATA

CONTENTS

PREFACE

Chapter 1: OVERVIEW OF GAS SENSOR TECHNOLOGY

ABSTRACT

1. BACKGROUND OF GAS SENSOR TECHNOLOGY

2. TYPES AND PRINCIPLES OF GAS SENSORS

2.1. Types of Gas Sensors

2.2. Receptors and Transducers - Construction Principles

2.3. Modes of Gas Sensing

Equilibrium Mode

Steady State Mode

Complete Reaction Mode

Accumulation Mode

3. BIRTH AND GROWTH OF GAS SENSOR TECHNOLOGY

3.1. Brief History

3.2. Mature Markets

3.3. Emerging Markets

Air Quality Sensor

Auto-damper sensor

Gas Sensor -combined Fire Alarm

Quality-discerning Odor Analyzer

CO2 Sensor

NOx Sensors

3.4. Challenging Markets

Onboard Car-Emission Sensors

Environmental Monitoring

Process Gas Monitoring

Wearable Sensors and Ubiquitous Sensors

4. FUNDAMENTAL ASPECTS OF SEMICONDUCTOR GAS SENSORS

4.1. Three Basic Factors

4.2. Higher Order Structure Favorable for High Sensitivity

4.3. Sensor Design to Promote Selectivity

5. PROPOSALS FOR NEXT GENERATION TECHNOLOGY

(1) Challenge Ultimately Miniaturized Gas Sensors

(2) Pay More Attention to Materials Processing and Materials Science

(3) Explore Intelligent Sensing Systems

(4) Seek Collaboration with Experts of Different Disciplines

REFERENCES

Chapter 2: CHEMIRESISTOR GAS SENSORS: MATERIALS, MECHANISMS AND FABRICATION

1. INTRODUCTION

2. CHEMIRESISTIVE SENSOR

2.1. Basic Characteristics

2.2. Determination of Sensing Parameters

3. CHEMIRESISTIVE SENSOR MATERIALS

3.1. Semiconductor Metal-oxides

(a) Materials and Analyte Gases

(b) Problems Associated with Metal-oxide Sensors

3.2. Non-oxide Materials

4. TIN OXIDE SENSOR.

4.1. Physical Properties

4.2. Gas Sensing Properties of Pure SnO2

4.3. Influence of Additives on Sensing Mechanism of SnO2

(a) Catalytic Effect

(b) Spill-over Effect

c) Fermi Energy Control

5. SENSOR FABRICATION

5.1. Pellet-based Sensors

5.2. Meso-porous Sensor

5.3. Thick Film Based Sensors

5.4. Thin Film Based Sensors

(a) Physical Vapor Deposition

(b) Chemical Vapor Deposition

6. SELECTIVE TIN OXIDE SENSORS

6.1. H2S Gas Sensor

(a) Sensor Fabrication

(b) Sensor Characteristics

(c) Sensing Mechanism

(d) Impedance Spectroscopy

6.2. NH3 Sensor

6.3. NO Sensor

6.4. H2 Sensor

7. FACTORS DETERMINING SENSING PROPERTIES

7.1. Geometrical Factors

(a) Grain Size Effect

(b) Crystallographic Plane Effect

(c) Agglomeration of Grains and Porosity Effect

7.2. Physico-chemical Properties

8. GAS SENSORS ON MICROHOTPLATES

CONCLUSIONS

ACKNOWLEDGEMENTS

Chapter 3: ONE-ELECTRODE SEMICONDUCTOR GAS SENSORS

2. DESIGN FEATURES OF ONE-ELECTRODE METAL OXIDE GAS SENSORS AND THEIR PRINCIPLE OF OPERATION

2.1. Parameters of One-electrode Gas Sensors and Their OperatingPrinciples

2.2. Selection of Gas Sensing Materials

2.3. Comparison of One-electrode Semiconductor Gas Sensor and Pellistors

2.3.1. Pellistor Sensors

2.3.2. Comparison of One-electrode Semiconductor Sensors and Pellistors

3. TYPES OF ONE-ELECTRODE SEMICONDUCTOR GAS SENSORS

3.1. Ceramic Bead Type One-electrode Gas Sensors

3.2. Planar One-electrode Semiconductor Sensors

3.2.1. Thick Film Sensors

3.2.2. Thin Film Sensors

4. ADVANTAGES AND DISADVANTAGES OF ONE-ELECTRODE METAL OXIDE GAS SENSORS

5. OPTIMIZATION OF ONE-ELECTRODE SEMICONDUCTOR GAS SENSORS

5.1. Optimization of Gas Response through Chemical Modification of Metal Oxide Phase.

5.2. Effect of Doping on Electrophysical Properties and Sensor Response of In2O3-based One-electrode Sensors

5.3. Effect of Doping on Response Time and Sensitivity of In2O3 Sensors

5.4. Influence of Humidity on the Gas Response of In2O3-based One-electrode Gas Sensors

5.5. Structural Properties of In2O3-based Doped Ceramics Used for Sensor Fabriation

5.5.1. Raman Scattering Spectroscopy Studies of In2O3-doped Ceramics

5.5.2. Model of the Grain Structure of In2O3 Doped Ceramics

6. MARKET OF ONE-ELECTRODE SEMICONDUCTOR GAS SENSORS

6.1. One-electrode Gas Sensors Fabricated by "INNOVATSENSOR Ltd"

6.2. Sensors of Henan Hanwei Electronics Co Ltd.

6.3. One-electrode Gas Sensors of New Cosmos Electric Co

7. PROBLEMS AND PROSPECTUS OF ONE-ELECTRODE SEMICONDUCTOR GAS SENSORS

Chapter 4: NANOSTRUCTURED METAL OXIDES AND THEIR HYBRIDS FOR GAS SENSING APPLICATIONS

2. SIZE MATTERS AND THEREFORE 'NANO' MATTERS FOR GAS SENSING

3. NANOSTRUCTURED METAL OXIDES

3.1. Basic Mechanisms of Gas Sensing in Semiconductor

3.2. Surface states and Double Layers

3.3. N-P Type and P-N Type Transitions in Semiconductor Gas Sensors

4. IMPORTANCE OF 'NANO'

5. FABRICATION OF NANOSTRUCTURED METAL OXIDES

5.1. Conventional Methods

5.1.1. Thin Film Technologies

5.1.2. Thick Film Technologies

5.2. Unconventional Nanostructures

6. CASE STUDIES OF 1D AND 2D NANOSTRUCTURED SEMICONDUCTOR METAL OXIDES

6.1. Basic Gas Sensing Mechanism in 1D Nanostructures

6.2. Use of Catalysts

6.3. 1D and 2D Metal Oxides

6.3.1. Zinc Oxide

6.3.2. Tin Oxide Nanostructures and their Applicability in Sensing

6.3.3. Indium Oxide

6.3.4. Tungsten Oxide

6.3.5. Molybdenum Oxide

6.3.6. V2O5

6.4. Future Challenges

7. SUMMARY

REFERENCES.

Chapter 5: THE DYNAMIC MEASUREMENTS OF SNO2 GAS SENSORS AND THEIR APPLICATIONS

2. EXPERIMENTS

2.1. Fabrication of Tin Oxide Sensors

2.2. Experimental Set-up

2.3. Static and Dynamic Measurements

2.3.1. Differences between Static and Dynamic Measurements

2.3.2. Static Measurements

2.3.3. Dynamic Measurements

2.3.4. Necessary Conditions for Dynamic Measurements

3. INFLUENCE FACTORS IN THE MEASUREMENT PROCESS

3.1. Effect of the Duty Ratios at an Applied Potential of 7V

3.2. Effect of Modulation Waveform

3.3. Effect of the Modulation Temperature

3.3.1. Temperature Variation under Static Measurements

3.3.2. Temperature Curves under Different Duty Ratios

3.3.3. Temperature Curves under Different Applied Voltages

4. THEORETICAL MODEL AND SIGNAL PROCESSING

4.1. Theoretical Model for Conductance

4.2. Feature Extraction

4.2.1. Estimation of the Model Parameters by Curve Fitting

4.2.2. Fourier Transform (FT)

4.2.3. Wavelet Transform (WT)

4.3. Qualitative Analysis

4.4. Quantitative Analysis

5. APPLICATIONS IN DETECTING HAZARD GASES

5.1. Application in Detecting Liquefied Petroleum Gas (LPG)

5.1.1. The Dynamic Measurement of Liquefied Petroleum Gas (LPG)

5.1.2. FFT

5.2. Application in Detecting CO and CH4

5.2.1. The Dynamic Response to CO and CH4

5.2.2. Feature Extraction

5.2.3. Qualitative Analysis

5.2.4. Quantitative Analysis

5.3. Application in Detecting Pesticide Residue

5.3.1. Comparative Experiments between Static and Dynamic Response to Pesticides

5.3.2. The Dynamic Response to Pesticides under Different Concentrations

5.4. SPME/SnO2 Gas Sensor for the Detection of Organophosphorus Pesticides

5.4.1. The Dynamic Response to Pesticides Based on the SPME/SnO2 Gas Sensor

5.4.2. Data Evaluation and Feature Extraction.

6. SUMMARY

Chapter 6: RESISTIVE OXYGEN SENSORS

2. OXYGEN SENSORS FOR AUTOMOTIVE EMISSION CONTROL

3. DEFECT CHEMISTRY OF METAL-OXIDES

3.1. Undoped and Lightly-doped Systems (Dilute Solutions)

3.2. Heavily-doped Systems (Concentrated Solutions)

3.3. Solid-solution Systems

3.4. The Defect Chemistry of SrTi1-xFexO3-y

4. TEMPERATURE DEPENDENCE

5. KINETICS

6. STABILITY

ACKNOWLEDGMENTS

Chapter 7: TELLURIUM THIN FILMS BASED GAS SENSOR

2. BONDING AND CRYSTAL STRUCTURE

2.1. Bonding

2.2. Crystal Structure

3. FABRICATION OF TE SENSORS

3.1. Thin Film Deposition

3.2. Fabrication of Sensor Device

4. MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF TE FILMS

4.1. Effect of Substrate Temperature

4.2. Effect of Post Deposition Annealing

4.3. Effect of Substrate Microstructure

4.4. Effect of Film Thickness and Deposition Rate

5. SENSITIVITY OF TE FILMS TO GASES

5.1. Effect of Operating Temperature on Response

5.2. Effect of Gas Concentration on Sensitivity

5.3. Effect of Deposition Parameters on Sensor Characteristics

5.3.1. Deposition Temperature

5.3.2. Substrate Microstructure

5.3.3. Post Deposition Annealing

5.3.4. Film Thickness and Deposition Rate

6. MECHANISM OF GAS-FILM INTERACTION

6.1. Raman Spectroscopy

6.2. X-ray Photoelectron Spectroscopy

6.3. Impedance Spectroscopy

6.4. Band Model for Gas-Te Film Interaction

7. LONG-TERM STABILITY AND SELECTIVITY

8. CONCLUSIONS

Chapter 8: VIBRATING CAPACITOR METHOD IN THE DEVELOPMENT OF SEMICONDUCTOR GAS SENSORS

8.1. INTRODUCTION

8.2. THE VIBRATING CAPACITOR

8.2.1. Principle of the Operation

8.2.2. Practical Realisation of the Vibrating Capacitor System.

8.2.3. The Kelvin Force Microscopy.

Notes:

Description based upon print version of record.

Includes bibliographical references and index.

Description based on print version record.

ISBN:

1-61728-665-6

OCLC:

662453270