Growth kinetics of chemical compound layers / V.I. Dybkov.

Format:

Book

Author/Creator:

Dybkov, V. I. (Vasiliĭ Ivanovich)

Language:

English

Subjects (All):

Chemical kinetics.

Chemical engineering.

Physical Description:

1 online resource (201 p.)

Place of Publication:

Cambridge : Cambridge International Science, 2004.

Language Note:

English

Summary:

The author proposes a physico-chemical approach to examining the process of solid state growth of layers of chemical compounds at the interface between initial substances in binary heterogeneous systems formed by two solid substances and between a solid substance and a liquid or gas. Experimental data obtained for the thickness (mass) of layers-time dependences are presented. Growth rates of the layer of the same compound in different reaction pairs consisting of elements and their chemical compounds are compared. The effect of dissolution of the solid-liquid system and of evaporation in the solid-gas system on the rate of formation of a chemical compound layer is taken into consideration. Reasons for large differences in the coefficients of reaction diffusion and self-diffusion of components of the chemical compound are analysed. Problems discussed in the book are encountered in welding, brazing, heterogeneous catalysis, semiconductor technology, microelectronics.

Contents:

Intro

INTRODUCTORY REMARKS

1. SOLID-STATE GROWTH OF A CHEMICAL COMPOUND LAYER AT THE INTERFACE OF TWO ELEMENTARY SUBSTANCES

1.1 Special features of description of the kinetics of solid-state heterogeneous reactions

1.2 Reaction diffusion

1.3 Growth of the ApBq layer at the expense of diffusion of only component B

1.3.1 Critical thickness of the ApBq layer with regard to component B

1.3.2 Growth regime of the ApBq layer with regard to component B: Theoretical definition

1.3.3. Stationary state or stationary point?

1.4. Growth of the ApBq layer at the expense of diffusion of components A and B

1.4.1 Critical thickness and the growth regime of the ApBq layer with regard to component A

1.4.2 General kinetic equation: a single compound layer

1.4.3. Separate determination of the reaction diffusion constants

1.5. Linear growth of the Cu6Sn5 layer in the copper-tin reaction couple

1.6. Parabolic growth of the AlSb layer in the aluminium-antimony diffusion couple

1.7 Linear-parabolic growth of the chemical compound layer

1.8. The ratio of diffusion coefficients of a component in growing and nongrowing chemical compound layers

1.9 Growth of the layer of a single compound: Brief conclusions

2. GROWTH OF THE LAYERS OF TWO CHEMICAL COMPOUNDS BETWEEN ELEMENTARY SUBSTANCES

2.1. Chemical reactions at phase interfaces

2.2. A system of differential equations describing the formation rate of the layers of two chemical compounds

2.3. Initial linear growth of the ApBq and ArBs layers

2.4. Minimal thickness of the ArBs layer necessary for the ApBq layer to grow

2.5 Non-linear growth of the ApBq and ArBs layers

2.6 Effect of the critical thickness of the ApBq layer with regard to component A on the process of growth of the ArBs layer

2.7 'Paralinear' stage of growth of two compound layers.

2.8 Diffusional stage of growth of the ApBq and ArBs layers

2.9 Growth of the layers of two compounds: brief conclusions

3. GROWTH OF COMPOUND LAYERS IN A MULTIPHASE BINARY SYSTEM

3.1 Chemical reactions at the phase interfaces of a multiphase binary system

3.2 A system of differential equations describing the growth process of layers of three chemical compounds between elementary substances A and B

3.3 Initial linear growth of the layers

3.4 Transition from linear to non-linear kinetics

3.5 Critical values of the thickness of the layers and their effect on growth kinetics

3.6 Diffusional stage of formation of the layers

3.7 Sequence of formation of the layers of chemical compounds in the A-B reaction couple of a multiphase binary system

3.8 Multiphase growth of compound layers: brief conclusions

4. THE EFFECT OF COMPOSITIONS OF INITIAL PHASES ON THE GROWTH RATE OF A CHEMICAL COMPOUND LAYER

4.1 Growth of the ArBs layer at the A-B interface

4.2 Growth of the ArBs layer at the ApBq-B interface

4.2.1 Growth of the ArBs layer between ApBq and B at the expense of diffusion of only component A

4.2.2 Growth of the ArBs layer between ApBq and B at the expense of diffusion of both components

4.3 Growth of the ArBs layer at the ApBq - AlBn interface

4.4 Comparison of the growth rates of the ArBs layer in different reaction couples of the A - B multiphase system

4.5 Duplex structure of the ArBs layer

4.6 The effect of compositions of initial phases on the growth rate of a chemical compound layer: brief conclusions

5. THE EFFECT OF DISSOLUTION (EVAPORATION) ON THE GROWTH RATE OF A CHEMICAL COMPOUND LAYER

5.1 Main relationships governing dissolution of a solid in a liquid

5.2 Experimental investigation of the process of dissolution of a solid in a liquid.

5.2.1 Determination of saturation concentration

5.2.2 Determination of the dissolution rate constant

5.2.3 Determination of diffusion coefficients

5.3 Growth kinetics of the layer of a chemical compound under the conditions of its simultaneous dissolution in the liquid phase

5.4 Growth kinetics of intermetallic layers at the transition metal- liquid aluminium interface

5.5 Special features of kinetic dependences in the solid-gas system

5.5.1 Influence of evaporation on the growth of a chemical compound layer

5.5.2 Oxidation of chemical compounds

5.6 The effect of dissolution (evaporation) on the growth rate of a chemical compound layer: brief conclusions

FINAL REMARKS

REFERENCES

Index.

Notes:

Includes index.

ISBN:

1-280-50065-4

9786610500659

1-904602-84-3

OCLC:

191926095