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GaN-based materials and devices : growth, fabrication, characterization and performance / editors, M.S. Shur, R.F. Davis.
- Format:
- Book
- Series:
- Selected topics in electronics and systems ; v. 33.
- Selected topics in electronics and systems ; v. 33
- Language:
- English
- Subjects (All):
- Gallium nitride.
- Semiconductors.
- Physical Description:
- 1 online resource (295 p.)
- Edition:
- 33th ed.
- Place of Publication:
- Singapore ; River Edge, N.J. : World Scientific, c2004.
- Language Note:
- English
- Summary:
- The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
- Contents:
- Preface; CONTENTS; Materials Properties of Nitrides. Summary; Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy; Strain of GaN Layers Grown Using 6H-SiC(0001) Substrates with Different Buffer Layers; Growth of Thick GaN Films and Seeds for Bulk Crystal Growth; Cracking of GaN Films; Direct Bonding of GaN and SiC; A Novel Technique for Electronic Device Fabrication; Electronic Properties of GaN (0001) - Dielectronic Interfaces; Transport and Noise Properties; Quasi-Ballistic and Overshoot Transport in Group III-Nitrides; High Field Transport in AIN
- Generation-Recombination Noise in GaN-Based DevicesInsulated Gate III-N Heterostructure Field-Effect Transistors; High Voltage AIGaN/GaN Heterojunction Transistors; Etched Aperture GaN CAVET Through Photoelectrochemical Wet Etching; n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion
- Notes:
- Description based upon print version of record.
- Includes bibliographical references.
- ISBN:
- 9786611347628
- 9781281347626
- 1281347620
- 9789812562364
- 9812562362
- OCLC:
- 475932992
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