Silicon carbide micro electromechanical systems for harsh environments / editor Rebecca Cheung.

Format:

Book

Contributor:

Cheung, Rebecca.

Language:

English

Subjects (All):

Microelectromechanical systems.

Silicon carbide.

Physical Description:

1 online resource (193 p.)

Edition:

1st ed.

Other Title:

Silicon carbide microelectromechanical systems for harsh environments

Place of Publication:

London : Imperial College Press, c2006.

Language Note:

English

Summary:

This unique book describes the science and technology of silicon carbide (SiC) microelectromechanical systems (MEMS), from the creation of SiC material to the formation of final system, through various expert contributions by several leading key figures in the field. The book contains high-quality up-to-date scientific information concerning SiC MEMS for harsh environments summarized concisely for students, academics, engineers and researchers in the field of SiC MEMS. This is the only book that addresses in a comprehensive manner the main advantages of SiC as a MEMS material for application

Contents:

CONTENTS ; Preface ; 1 Introduction to Silicon Carbide (SiC) Microelectromechanical Systems (MEMS) ; 1 Introduction ; 2 SiC Material Properties ; 3 Making a Microelectromechanical (MEM) Device ; 3.1 Micromachining Processes ; 3.1.1 Bulk micromachining ; 3.1.2 Surface micromachining

4 Surface Modification 5 Frequency Tuning of the SiC MEMS ; 6 Mechanical Testing of the MEMS ; 7 Application Examples ; 8 Summary ; References ; 2 Deposition Techniques for SiC MEMS ; 1 Introduction ; 2 Deposition Issues Related to SiC for MEMS

3 Atmospheric Pressure Chemical Vapor Deposition 3.1 Epitaxial 3C-SiC Films ; 3.2 Polycrystalline 3C-SiC Films ; 4 Plasma Enhanced Chemical Vapor Deposition ; 5 Low Pressure Chemical Vapor Deposition ; 5.1 Overview ; 5.2 Epitaxial 3C-SiC Films ; 5.3 Polycrystalline 3C-SiC Films

6 Doping ofLPCVDPoly-SiC Films 7 Other Deposition Methods ; 8 Conclusions ; References ; 3 Review of Issues Pertaining to the Development of Contacts to Silicon Carbide: 1996 - 2002 ; 1 Introduction ; 2 Thermal Stability ; 2.1 Thermal Stability of Ohmic Contacts

2.2 Thermal Stability of Rectifying Contacts 3 Ohmic Contacts to p-type SiC ; 3.1 Introduction ; 3.2 Al-based Contacts ; 3.3 Al-free Contacts ; 4 Ohmic Contacts Using Nickel ; 4.1 Introduction ; 4.2 Thermodynamics ; 4.3 Phase Formation Sequence ; 4.4 Issues ; 4.5 Mechanisms

4.6 Alloying

Notes:

Description based upon print version of record.

Includes bibliographical references.

ISBN:

9786611347567

9781281347565

1281347566

9781860949098

1860949096

OCLC:

815568138