2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) / Institute of Electrical and Electronics Engineers.

Format:

Book

Author/Creator:

Institute of Electrical and Electronics Engineers, author, issuing body.

Language:

English

Subjects (All):

Semiconductors--Congresses.

Semiconductors.

Physical Description:

1 online resource (various pagings) : illustrations

Other Title:

2016 IEEE International Meeting for Future of Electron Devices, Kansai

Place of Publication:

Piscataway, NJ : IEEE, 2016.

Summary:

Annotation The meeting covers all areas of electron devices Si devices, compound semiconductor devices, emerging solid state devices, circuit technology and related modeling, simulations, characterization, material and process technologies, microwave theory and technologies.

Contents:

[Front cover]

Preface

Organization

Awards [2 awards]

Table of contents

Keynote speeches

Quest for visual system of the brain to create artificial vision

Session A (silicon devices)

Detection and characterization of single MOS interface traps by the charge pumping method

Heterogeneous integration of SiGe/Ge and III-V on Si for CMOS photonics

High power efficient and scalable noise-shaping SAR ADC for IoT sensors

Analysis of the SOG film crack mechanism for TEOS/SOG/TEOS structure

Poster session

Kinetic Monte Carlo simulation for switching probability of ReRAM.

Notes:

Description based on publisher supplied metadata and other sources.

ISBN:

1-5090-1978-2