2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) : June 12-16, 2016, Žofín Palace, Prague, Czech Republic / Institute of Electrical and Electronics Engineers.

Format:

Book

Author/Creator:

Institute of Electrical and Electronics Engineers, author, issuing body.

Language:

English

Subjects (All):

Integrated circuits--Congresses.

Integrated circuits.

Power electronics--Congresses.

Power electronics.

Physical Description:

1 online resource : illustrations

Other Title:

2016 28th International Symposium on Power Semiconductor Devices and ICs

Place of Publication:

Piscataway, NJ : IEEE, 2016.

Summary:

ISPSD is the premier forum for technical discussion in all areas of power semiconductor devices and power integrated circuits It covers the following topics Devices Device Physics, Device Design, High Frequency Devices, High Power Devices, Smart Power Devices, Safe Operating Area, Reliability, ESD Processes Process Integration, Lifetime Control, Passivation, Crystal Growth, III V (hetero) epitaxial growth Modeling Simulation Device and Circuit Simulation, Layout, Verification Tools Materials Si, GaAs, SiC, GaN, Diamond Power ICs Isolation Techniques, SOI, Circuit Design, Device Technology, Energy Capability and SOA, Reliability, ESD, Power SoC, Monolithic vs Hybrid Packaging Novel Packaging Concepts, Power SiP, Stress and Thermal Analysis, Thermal Management Applications Hybrid Vehicles, Power Supplies, Computer and Telecom Power, Motor Drives, Utility.

Contents:

[Front cover]

[Title page]

[Copyright notice]

Chairman message

Conference committees

Call for papers

ISPSD 2015 Best Paper Award

ISPSD 2015 Charitat Award

ISPSD 2016 Pioneer Award: Dieter Silber

Session details.

Notes:

Description based on publisher supplied metadata and other sources.

ISBN:

1-4673-8770-3