1 option
2010 22nd International Symposium on Power Semiconductor Devices and IC's
- Format:
- Book
- Author/Creator:
- Institute of Electrical and Electronics Engineers (IEEE), author, issuing body.
- Language:
- English
- Subjects (All):
- Integrated circuits--Congresses.
- Integrated circuits.
- Power semiconductors--Congresses.
- Power semiconductors.
- Physical Description:
- 1 online resource : illustrations
- Place of Publication:
- [Place of publication not identified] I E E E 2010
- Language Note:
- English
- Summary:
- The blocking characteristics of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) were considerably improved by an oxygen (O2) annealing. This proposed annealing, which was performed before Schottky contact formation, successfully decreased the leakage current though the buffer region by about six orders of magnitude and had no effect on the current capability of the active region. The suppressed leakage current may be due to the improved surface condition induced by the reaction between oxygen and the AlGaN/GaN heterostructure. The proposed device employing the O2 annealing exhibited a suppressed leakage current and a high breakdown voltage of 1140 V without any surface passivation or edge termination structure.
- Notes:
- Bibliographic Level Mode of Issuance: Monograph
- ISBN:
- 9784886860699
- 4886860699
The Penn Libraries is committed to describing library materials using current, accurate, and responsible language. If you discover outdated or inaccurate language, please fill out this feedback form to report it and suggest alternative language.