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2010 IEEE International SOI Conference
- Format:
- Book
- Author/Creator:
- Institute of Electrical and Electronics Engineers, author, issuing body.
- Language:
- English
- Subjects (All):
- Electrical engineering--Congresses.
- Electrical engineering.
- Physical Description:
- 1 online resource
- Place of Publication:
- [Place of publication not identified] I E E E 2010
- Language Note:
- English
- Summary:
- The robustness against Electrostatic Discharge (ESD) events of gated diodes, fabricated in CMOS 45nm FDSOI technology, is compared for 10nm and 145nm Buried Oxide (BOX) thickness. It is shown that the performance of devices for co-design on thin BOX is improved thanks to a better thermal dissipation: A gain of 1.6 on the robustness was found.
- Notes:
- Bibliographic Level Mode of Issuance: Monograph
- ISBN:
- 9781424491292
- 1424491290
- 9781424491285
- 1424491282
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