Materials for high-temperature semiconductor devices / Committee on Materials for High-Temperature Semiconductor Devices, National Materials Advisory Board, Commission on Engineering and Technical Systems, National Research Council.

Format:

Book

Contributor:

National Research Council (U.S.). Committee on Materials for High-Temperature Semiconductor Devices.

Language:

English

Subjects (All):

Semiconductors.

Materials at high temperatures.

Wide gap semiconductors.

Physical Description:

1 online resource (135 p.)

Edition:

1st ed.

Place of Publication:

Washington, D.C. : National Academy Press, c1995.

Language Note:

English

Summary:

Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.

Contents:

Materials For High-Temperature Semiconductor Devices

Copyright

Abstract

Preface

Acknowledgements

Contents

Executive Summary

GENERAL CONCLUSIONS AND RECOMMENDATIONS

Temperature Ranges

U.S. Competitiveness

Demonstration Technologies

Funding Strategy

MATERIALS-SPECIFIC CONCLUSIONS AND RECOMMENDATIONS

Silicon Carbide

Nitrides

Diamond

Packaging

1 Background

SURVEY I: APPLICATIONS OF HIGH-TEMPERATURE ELECTRONICS BY INDUSTRY

Automotive

Aerospace

Gas Turbine Engines

Other Aerospace Applications

Space Vehicles And Exploration

Nuclear Power

Petroleum Exploration

Industrial Process Control

Power Electronics

SURVEY II: APPLICATIONS BY THERMAL ENVIRONMENT

SURVEY III: HIGH-TEMPERATURE ELECTORNIS APPLICATIONS BY COMPLEXITY

SUMMARY

2 State Of The Art Of Wide Bandgap Materials

SILICON CARBIDE

Materials Description And Properties

Methods Of Fabrication

Bulk Growth

Background

Current Status

Epitaxial Growth

CVD Of α-SiC Epitaxial Films

SiC Epitaxy In The c-Axis Direction

SiC Epitaxy In The a-Axis Direction

Hetero-Epitaxial Growth Of 3C-SiC Films

Other Epitaxial Processes

Summary

NITRIDE MATERIALS

Properties

Crystal Growth

DIAMOND

Methods Of Synthesis And Characterization

Synthesis

Characterization

Diamond Processing

3 Device Physics: Behavior at Elevated Temperatures

HIGH-TEMPERATURE EFFECTS: FUNDAMENTAL, MATERIALS-RELATED PROPERTIES

Carrier Mobilities

Intrinsic Carrier Concentrations: Dependence on Bandgap Energy and Temperature

PREDICTING HIGH-TEMPERATURE-DEVICE PERFORMANCE: MATERIALS-RELATED FIGURES OF MERIT

Device Physics At High Temperatures

Junction Leakage: p-n Junctions And Diodes

Schottky Leakage

Threshold Voltage Shifts.

Choice Of High-Temperature-Device Technologies

4 Generic Technical Issues Associated With Materials For High-Temperature Semiconductors

ELECTRICAL CONTACTS

Schottky Contacts To SiC

Ohmic Contacts To SiC

Ohmic Contacts To GaN

DOPING AND IMPLANTATION

Doping Of SiC

Doping Of GaN

Doping Of AlN

Doping Of Diamond

GATE OXIDES AND INSULATORS

Gate Oxides And Insulators For SiC

Gate Oxides And Insulators For The Nitrides

Gate Oxides And Insulators For Diamond

ETCHING

Etching Of SiC

Etching Of The Nitrides: GaN And AlN

Etching Of Diamond

DEFECT ENGINEERING AND CONTROL

YIELD

DEVICE RELIABILITY

5 High-Temperature Electronic Packaging

CHIP PACKAGING

SUBSTRATES

THICK-FILM AND THIN-FILM METALLIZATION

COMPONENT ATTACHMENT

INTERCONNECTION

SECOND-LEVEL PACKAGING

6 Device Testing For High-Temperature Electronic Materials

SHORT-TERM CONSTANT-TEMPERATURE TESTS

CONSTANT-TEMPERATURE LIFE TEST

THERMAL-CYCLING TESTS

FUTURE REQUIREMENTS FOR HIGH-TEMPERATURE TESTING

7 Conclusions And Recommendations

References

Appendix A: Silicon As A High-Temperature Material

HIGH-TEMPERATURE OPERATION OF SILICON CIRCUITS

Bipolar Analog Circuits

Bipolar Digital Circuits

FET Analog Circuits

Digital Cmos

DIELECTRIC ISOLATION TECHNOLOGY

Wafer Bonding

SIMOX

Lateral Isolation

APPLICATIONS TO DEVICE TECHNOLOGY

Bipolar-Junction-Transistor Applications In SOI Technology

Cmos Applications In SOI

REFERENCES

Appendix B: Gallium Arsenide As A High-Temperature Material.

STATUS OF COMMERCIAL VLSI GAAS DEVICES FOR HIGH-TEMPERATURE ELECTRONICS

APPROACHES FOR IMPROVING GAAS IC HIGH-TEMPERATURE LIMITS

CONCLUSIONS

Appendix C: High-Temperature Microwave Devices

BASIC DEVICE TYPES

Bipolar Junction Transistors

Static Induction Transistors

Junction Field Effect Transistors

Metal-Semiconductor Field Effect Transistors

Impact Avalanche Transit-Time Diodes

EXPECTATIONS FOR WIDE BANDGAP MESFETS

Current-Voltage Curves

Power And Efficiency

Mesfet Gain

Thermal Properties Of SiC MESFETs

Wide Bandgap Mesfets At Elevated Temperatures

Gallium Nitride

Appendix D: Biographical Sketches Of Committee Members.

Notes:

"NMAB-474."

Includes bibliographical references.

ISBN:

9786610192762

9780309176057

0309176050

9781280192760

1280192763

9780309596534

030959653X

9780585084695

0585084696

OCLC:

614702456