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Carrier transport in nanoscale MOS transistors / Hideaki Tsuchiya, Yoshinari Kamakura.

Van Pelt Library TK7871.95 .T78 2017
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Format:
Book
Author/Creator:
Tsuchiya, Hideaki, author.
Kamakura, Yoshinari, author.
Language:
English
Subjects (All):
Metal oxide semiconductor field-effect transistors.
Carrier waves--Mathematical models.
Carrier waves.
Mathematical models.
Physical Description:
x, 249 pages : illustrations ; 26 cm
Edition:
First published.
Place of Publication:
Singapore : Wiley, ©2016.
Summary:
Comprehensive examination of the transport theory of nanoscale devices, this book combines advances with a conventional theoretical framework that includes an electronic device like MOSFET. Readers will gain an understanding of operating principles to perform actual device design, and are introduced to important concepts from quantum theory to advanced integrated devices systematically.
Contents:
Emerging technologies
First-principles calculations for Si nanostructures
quasi-ballistic transport in Si nanoscale MOSFETs
Phonon transport in Si nanostructures
Carrier transport in high-mobility MOSFETs
Atomistic simulations of Si Ge and III-V nanowire MOSFETs
2-D materials and devices.
Notes:
Includes bibliographical references and index.
ISBN:
9781118871669
1118871669
OCLC:
967219573

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